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PBSS4620PA,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
PBSS4620PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 18 May 2010 3 of 15
NXP Semiconductors
PBSS4620PA
20 V, 6 A NPN low V
CEsat
(BISS) transistor
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
[4] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
[4] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
T
j
junction temperature - 150 °C
T
amb
ambient temperature −55 +150 °C
T
stg
storage temperature −65 +150 °C
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm
2
(3) FR4 PCB, mounting pad for collector 1 cm
2
(4) FR4 PCB, standard footprint
Fig 1. Power derating curves
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
T
amb
(°C)
−75 17512525 75−25
006aab978
1.0
1.5
0.5
2.0
2.5
P
tot
(W)
0.0
(1)
(3)
(2)
(4)
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
--250K/W
[2]
--125K/W
[3]
--90K/W
[4]
--60K/W
PBSS4620PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 18 May 2010 4 of 15
NXP Semiconductors
PBSS4620PA
20 V, 6 A NPN low V
CEsat
(BISS) transistor
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for collector 1 cm
2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab979
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
006aab980
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
PBSS4620PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 18 May 2010 5 of 15
NXP Semiconductors
PBSS4620PA
20 V, 6 A NPN low V
CEsat
(BISS) transistor
FR4 PCB, mounting pad for collector 6 cm
2
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab981
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
006aab982
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
10
1
10
2
Z
th(j-a)
(K/W)
10
−1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PBSS4620PA,115

Mfr. #:
Buy PBSS4620PA,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 20V 6A NPN LO VCEsat TRANSISTOR
Lifecycle:
New from this manufacturer.
Delivery:
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