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PBSS4620PA,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
PBSS4620PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 18 May 2010 6 of 15
NXP Semiconductors
PBSS4620PA
20 V, 6 A NPN low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base
cut-off current
V
CB
=16V; I
E
= 0 A - - 100 nA
V
CB
=16V; I
E
=0A;
T
j
= 150 °C
--50μA
I
CES
collector-emitter
cut-off current
V
CE
=16V; V
BE
= 0 V - - 100 nA
I
EBO
emitter-base
cut-off current
V
EB
=5V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=2V
[1]
I
C
= 0.5 A 280 440 -
I
C
= 1 A 270 430 -
I
C
= 2 A 260 415 -
I
C
= 6 A 200 330 -
V
CEsat
collector-emitter
saturation voltage
I
C
=0.5A; I
B
=50mA
[1]
- 2030mV
I
C
=1A; I
B
=50mA
[1]
- 3755mV
I
C
=1A; I
B
=10mA
[1]
- 5070mV
I
C
=2A; I
B
=20mA
[1]
- 85 120 mV
I
C
=3A; I
B
=30mA
[1]
- 120 170 mV
I
C
=4A; I
B
= 400 mA
[1]
- 135 185 mV
I
C
=6A; I
B
= 300 mA
[1]
- 200 275 mV
R
CEsat
collector-emitter
saturation resistance
I
C
=6A; I
B
= 300 mA
[1]
- 3346mΩ
V
BEsat
base-emitter
saturation voltage
I
C
=1A; I
B
=10mA
[1]
- 0.75 0.9 V
I
C
=6A; I
B
= 300 mA
[1]
- 0.97 1.1 V
V
BEon
base-emitter
turn-on voltage
V
CE
=2V; I
C
=2A
[1]
- 0.74 0.9 V
t
d
delay time V
CC
=9V; I
C
=2A;
I
Bon
=0.1A;
I
Boff
= −0.1 A
-25-ns
t
r
rise time - 55 - ns
t
on
turn-on time - 80 - ns
t
s
storage time - 285 - ns
t
f
fall time - 50 - ns
t
off
turn-off time - 335 - ns
f
T
transition frequency V
CE
=10V;
I
C
=100mA;
f=100MHz
50 80 - MHz
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
- 8095pF
PBSS4620PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 18 May 2010 7 of 15
NXP Semiconductors
PBSS4620PA
20 V, 6 A NPN low V
CEsat
(BISS) transistor
V
CE
=2V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
Fig 6. DC current gain as a function of collector
current; typical values
Fig 7. Collector current as a function of
collector-emitter voltage; typical values
V
CE
=2V
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
I
C
/I
B
=20
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 8. Base-emitter voltage as a function of collector
current; typical values
Fig 9. Base-emitter saturation voltage as a function
of collector current; typical values
006aac120
400
200
600
800
h
FE
0
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(2)
(1)
(3)
V
CE
(V)
0.0 5.04.02.0 3.01.0
006aac121
4
2
6
8
I
C
(A)
0
I
B
(mA) = 20
18
16
14
12
10
2
4
6
8
006aac122
0.4
0.8
1.2
V
BE
(V)
0.0
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(2)
(1)
(3)
006aac123
0.4
0.8
1.2
V
BEsat
(V)
0.0
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(2)
(1)
(3)
PBSS4620PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 18 May 2010 8 of 15
NXP Semiconductors
PBSS4620PA
20 V, 6 A NPN low V
CEsat
(BISS) transistor
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 11. Collector-emitter saturation voltage as a
function of collector current; typical values
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 13. Collector-emitter saturation resistance as a
function of collector current; typical values
006aac124
10
−1
10
−2
1
V
CEsat
(V)
10
−3
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(1)
(2)
(3)
006aac125
10
−1
10
−2
1
V
CEsat
(V)
10
−3
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(2)
(1)
(3)
006aac126
I
C
(mA)
10
−1
10
4
10
3
110
2
10
10
−1
1
10
10
2
R
CEsat
(Ω)
10
−2
(3)
(1)
(2)
I
C
(mA)
10
−1
10
4
10
3
110
2
10
006aac127
1
10
−1
10
2
10
10
3
R
CEsat
(Ω)
10
−2
(2)
(1)
(3)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PBSS4620PA,115

Mfr. #:
Buy PBSS4620PA,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 20V 6A NPN LO VCEsat TRANSISTOR
Lifecycle:
New from this manufacturer.
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