OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NBA3N200SDG

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
NBA3N200S
www.onsemi.com
4
Table 3. ATTRIBUTES (Note 1)
Characteristics
Value
ESD
Protection
Human Body Model (JEDEC
Standard 22, Method A114−A)
A, B
All Pins
±6 kV
±2 kV
Machine Model All Pins ±200 V
Charged –Device Model (JEDEC
Standard 22, Method C101)
All Pins ±1500 V
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1) Level 1
Flammability Rating
Oxygen Index
UL−94 code V−0 A 1/8”
28 to 34
Transistor Count 917 Devices
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Table 4. MAXIMUM RATINGS (Note 2)
Symbol
Parameter Condition 1 Condition 2 Rating Unit
V
CC
Supply Voltage −0.5 ≤ V
CC
≤ 4.0 V
V
IN
Input Voltage
D, DE, RE −0.5 ≤ V
IN
≤ 4.0
V
A, B −1.8 ≤ V
IN
≤ 4.0
I
OUT
Output Voltage R
A, B
−0.3 ≤ I
OUT
≤ 4.0
−1.8 ≤ I
OUT
≤ 4.0
V
T
A
Operating Temperature Range, Industrial −40 to ≤ +125 °C
T
stg
Storage Temperature Range −65 to +150 °C
θ
JA
Thermal Resistance (Junction−to−Ambient) 0 lfpm
500 lfpm
SOIC−8 190
130
°C/W
°C/W
θ
JC
Thermal Resistance (Junction−to−Case) (Note 3) SOIC−8 41 to 44 °C/W
T
sol
Wave Solder 265 °C
P
D
Power Dissipation (Continuous) T
A
= 25°C
25°C < T
A
< 125°C
T
A
= 125°C
725
5.8
377
mW
mW/°C
mW
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and not valid simultaneously.
If stress limits are exceeded device functional operation is not implied, damage may occur and reliability may be affected.
3. JEDEC standard multilayer board − 2S2P (2 signal, 2 power).
NBA3N200S
www.onsemi.com
5
Table 5. DC CHARACTERISTICS VCC = 3.3 ±10% V( 3.0 to 3.6 V), GND = 0 V, T
A
= −40°C to +125°C (See Notes 4, 5)
Symbol
Characteristic Min Typ Max Unit
ICC Power Supply Current
Receiver Disabled Driver Enabled RE
and DE at V
CC
, R
L
= 50 W, All others open
Driver and Receiver Disabled RE at VCC, DE at 0 V, R
L
= No Load, All others open
Driver and Receiver Enabled RE at 0 V, DE at V
CC
, R
L
= 50 W, All others open
Receiver Enabled Driver Disabled RE at 0 V, DE at 0 V, R
L
= 50 W, All others open
13
1
16
22
4
24
13
mA
V
IH
Input HIGH Voltage 2 V
CC
V
V
IL
Input LOW Voltage GND 0.8 V
VBUS Voltage at any bus terminal VA, VB, VY or VZ −1.4 3.8 V
|VID| Magnitude of differential input voltage 0.05 V
CC
DRIVER
|V
AB
| Differential output voltage magnitude (see Figure 4) 440 690 mV
D|V
AB
|
Change in Differential output voltage magnitude between logic states (see Figure 4) −50 50 mV
V
OS(SS)
Steady state common mode output voltage (see Figure 5) 0.8 1.2 V
DV
OS(SS)
Change in Steady state common mode output voltage between logic states (see
Figure 5)
−50 50 mV
V
OS(PP)
Peak−to−peak common−mode output voltage (see Figure 5) 150 mV
V
AOC
Maximum steady−state open−circuit output voltage (see Figure 9) 0 2.4 V
V
BOC
Maximum steady−state open−circuit output voltage (see Figure 9) 0 2.4 V
V
P(H)
Voltage overshoot, low−to−high level output (see Figure 7) 1.2 V
SS
V
V
P(L)
Voltage overshoot, high−to−low level output (see Figure 7) −0.2 V
SS
V
I
IH
High−level input current (D, DE) V
IH
= 2 V 0 10 uA
I
IL
Low−level input current (D, DE) V
IL
= 0.8 V 0 10 uA
JI
OS
J Differential short−circuit output current magnitude (see Figure 6) 24 mA
I
OZ
High−impedance state output current (driver only)
−1.4 V ≤ (VA or VB) ≤ 3.8 V, other output at 1.2 V
−15 10 uA
I
O(OFF)
Power−off output current (0 V ≤ V
CC
≤ 1.5 V)
−1.4 V ≤ (VA or VB) ≤ 3.8 V, other output at 1.2 V
−10 10 uA
RECEIVER
V
IT+
Positive−going Differential Input voltage Threshold (See Figure 11 & Table 8)
Type 1
50
mV
V
IT−
Negative−going Differential Input voltage Threshold (See Figure 11 & Table 8)
Type 1
−50
mV
V
HYS
Differential Input Voltage Hysteresis (See Figure 11 and Table 2)
Type 1
25
mV
VOH High−level output voltage (IOH = –8 mA 2.4 V
VOL Low−level output voltage (IOL = 8 mA) 0.4 V
I
IH
RE High-level input current (VIH = 2 V)
−10 0
mA
I
IL
RE Low-level input current (VIL = 0.8 V)
−10 0
mA
I
OZ
High−impedance state output current (VO = 0 V of 3.6 V) −10 15
mA
C
A
/ C
B
Input Capacitance VI = 0.4 sin(30E
6
πt) + 0.5 V, other outputs at 1.2 V using HP4194A
impedance analyzer (or equivalent)
3 pF
C
AB
Differential Input Capacitance VAB = 0.4 sin(30E
6
πt) V, other outputs at 1.2 V using
HP4194A impedance analyzer (or equivalent)
2.5 pF
C
A/B
Input Capacitance Balance, (CA/CB) 99 101 %
NBA3N200S
www.onsemi.com
6
Table 5. DC CHARACTERISTICS VCC = 3.3 ±10% V( 3.0 to 3.6 V), GND = 0 V, T
A
= −40°C to +125°C (See Notes 4, 5)
Symbol
Characteristic Min
Typ
(Note
5)
Max Unit
BUS INPUT AND OUTPUT
I
A
Input Current Receiver or Transceiver with Driver Disabled
V
A
= 3.8 V, V
B
= 1.2 V
V
A
= 0.0 V or 2.4 V, V
B
= 1.2 V
V
A
= −1.4 V, V
B
= 1.2 V
0
−20
−32
32
20
0
uA
I
B
Input Current Receiver or Transceiver with Driver Disabled
V
B
= 3.8 V, V
A
= 1.2 V
V
B
= 0.0 V or 2.4 V, V
A
= 1.2 V
V
B
= −1.4 V, V
A
= 1.2 V
0
−20
−32
32
20
0
uA
I
AB
Differential Input Current Receiver or Transceiver with driver disabled (I
A
−I
B
)
V
A
= V
B
, −1.4 ≤ V
A
≤ 3.8 V −4 4
uA
I
A(OFF)
Input Current Receiver or Transceiver Power Off 0V ≤ V
CC
≤ 1.5 and:
V
A
= 3.8 V, V
B
= 1.2 V
V
A
= 0.0 V or 2.4 V, V
B
= 1.2 V
V
A
= −1.4 V, V
B
= 1.2 V
0
−20
−32
32
20
0
uA
I
B(OFF)
Input Current Receiver or Transceiver Power Off 0V ≤ V
CC
≤ 1.5 and:
V
B
= 3.8 V, V
A
= 1.2 V
V
B
= 0.0 V or 2.4 V, V
A
= 1.2 V
V
B
= −1.4 V, V
A
= 1.2 V
0
−20
−32
32
20
0
uA
I
AB(OFF)
Receiver Input or Transceiver Input/Output Power Off Differential Input Current; (I
A
−I
B
)
V
A
= V
B
, 0 ≤ V
CC
≤ 1.5 V, −1.4 ≤ V
A
≤ 3.8 V −4 4
uA
C
A
Transceiver Input Capacitance with Driver Disabled VA = 0.4 sin(30E
6
πt) + 0.5 V using
HP4194A impedance analyzer (or equivalent); V
B
= 1.2 V
5 pF
C
B
Transceiver Input Capacitance with Driver Disabled VB = 0.4 sin(30E
6
πt) + 0.5 V using
HP4194A impedance analyzer (or equivalent); V
A
= 1.2 V
5 pF
C
AB
Transceiver Differential Input Capacitance with Driver Disabled VA = 0.4 sin(30E
6
pt) +
0.5 V using HP4194A impedance analyzer (or equivalent);
V
B
= 1.2 V
3.0 pF
C
A/B
Transceiver Input Capacitance Balance with Driver Disabled, (CA/CB) 99 101 %
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
4. See Figure 3. DC Measurements reference.
5. Typ value at 25°C and 3.3 VCC supply voltage.
Table 6. DRIVER AC CHARACTERISTICS VCC = 3.3 ±10% V( 3.0 to 3.6 V), GND = 0 V, T
A
= −40°C to +125°C (Note 6)
Symbol Characteristic Min Typ Max Unit
t
PLH
/ t
PHL
Propagation Delay (See Figure 7) 1.0 1.5 2.4 ns
t
PHZ
/ t
PLZ
Disable Time HIGH or LOW state to High Impedance (See Figure 8) 7 ns
t
PZH
/ t
PZL
Enable Time High Impedance to HIGH or LOW state (See Figure 8) 7 ns
t
SK(P)
Pulse Skew (|t
PLH
− t
PHL
|) (See Figure 7) 0 150 ps
t
SK(PP)
Device to Device Skew similar path and conditions (See Figure 7) 1 ns
t
JIT(PER)
Period Jitter RMS, 100 MHz (Source tr/tf 0.5 ns, 10 and 90% points, 30k sam-
ples. Source jitter de−embedded from Output values ) (See Figure 10)
2 3.5 ps
t
JIT(PP)
Peak−to−peak Jitter, 200 Mbps 2
15
−1 PRBS (Source tr/tf 0.5 ns, 10 and 90%
points, 100k samples. Source jitter de−embedded from Output values) (See
Figure 10)
30 160 ps
tr / tf Differential Output rise and fall times (See Figure 7) 0.9 1.6 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
6. Typ value at 25°C and 3.3 V
CC
supply voltage.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19

NBA3N200SDG

Mfr. #:
Buy NBA3N200SDG
Manufacturer:
ON Semiconductor
Description:
Clock Drivers & Distribution MLVDS DRIVER RECEIVER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet