ISL6627
4
FN6992.1
January 24, 2014
Absolute Maximum Ratings Thermal Information
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
Input Voltage (V
EN
, V
PWM
). . . . . . . . . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V
BOOT Voltage (V
BOOT-GND
) . . . . . . . . . . -0.3V to 25V (DC) or 36V (<200ns)
BOOT to PHASE Voltage (V
BOOT-PHASE
) . . . . . . . . . . . . . . . . -0.3V to 7V (DC)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 9V (<10ns)
PHASE Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 25V (DC)
. . . . . . . . . . . . . . . GND -8V (<20ns Pulse Width, 10µJ) to 30V (<100ns)
UGATE Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . V
PHASE
- 0.3V (DC) to V
BOOT
. . . . . . . . . . . . . . . . . . .V
PHASE
- 5V (<20ns Pulse Width, 10µJ) to V
BOOT
LGATE Voltage . . . . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V (DC) to VCC + 0.3V
. . . . . . . . . . . . . . . . GND - 2.5V (<20ns Pulse Width, 5µJ) to VCC + 0.3V
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . . . . .-40°C to +125°C
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2.5kV
Charged Device Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1kV
Latch Up (Tested per JESD78C; Class II, Level A) . . . . . . . . . . . . . . . 100mA
Thermal Resistance θ
JA
(°C/W) θ
JC
(°C/W)
10 Ld 3x3 DFN Package (Notes 4, 5). . . . . 51 10
Maximum Junction Temperature (Plastic Package) . . . . . . . . . . . .+150°C
Maximum Storage Temperature Range . . . . . . . . . . . . . .-65°C to +150°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Recommended Operating Conditions
Ambient Temperature Range(ISL6627IRZ) . . . . . . . . . . . . -40°C to +85°C
Ambient Temperature Range (ISL6627CRZ) . . . . . . . . . . . . .0°C to +70°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . . +125°C
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V ±10%
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
4. θ
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379
.
5. For θ
JC
, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted. Boldface limits apply over the operating
temperature range.
PARAMETER SYMBOL TEST CONDITIONS
MIN
(Note 7) TYP
MAX
(Note 7) UNITS
VCC SUPPLY CURRENT
No Load Switching Supply Current IVCC f_PWM = 300kHz, VCC = 5V, EN = High 1.27 mA
Standby Supply Current IVCC VCC = 5V, PWM 0V to 2.5V transition, EN = High 1.85 mA
VCC = 5V, PWM 0V to 2.5V transition, EN = Low 1.15 mA
POWER-ON RESET AND ENABLE
VCC Rising POR Threshold 3.20 3.85 4.40 V
VCC Falling POR Threshold 3.00 3.52 4.00 V
VCC POR Hysteresis 130 300 530 mV
EN High Threshold 1.40 1.65 1.90 V
EN Low Threshold 1.20 1.35 1.55 V
PWM INPUT (See “TIMING DIAGRAM” on page 6)
Input Current IPWM VPWM = 5V 155 µA
VPWM = 0V -133 µA
Three-State Lower Gate Falling Threshold VCC = 5V 1.6 V
Three-State Lower Gate Rising Threshold VCC = 5V 1.1 V
Three-State Upper Gate Rising Threshold VCC = 5V 3.2 V
Three-state Upper Gate Falling Threshold VCC = 5V 2.8 V
UGATE Rise Time (Note 6) t_RU VCC = 5V, 3nF load, 10% to 90% 8 ns
LGATE Rise Time (Note 6) t_RL VCC = 5V, 3nF load, 10% to 90% 8 ns
UGATE Fall Time (Note 6) t_FU VCC = 5V, 3nF load, 10% to 90% 8 ns
LGATE Fall Time (Note 6) t
FL
VCC = 5V, 3nF load, 10% to 90% 4 ns
UGATE Turn-On Propagation Delay (Note 6) t
PDHU
VCC = 5V, 3nF load, adaptive 28 ns
LGATE Turn-On Propagation Delay (Note 6) t
PDHL
VCC = 5V, 3nF load, adaptive 16 ns
UGATE Turn-Off Propagation Delay (Note 6) t
PDLU
VCC = 5V, 3nF load 15 ns
ISL6627
5
FN6992.1
January 24, 2014
LGATE Turn-Off Propagation Delay (Note 6) t
PDLL
VCC = 5V, 3nF load 14 ns
Minimum LGATE on Time at Diode Emulation t
LG_ON_DM
VCC = 5V 230 330 450 ns
PROPAGATION DELAY PROGRAMMING
UGATE Fall to LGATE Rise Time t
PDUFLR
VCC = 5V, 3nF Load, 90% to 10%,
short resistor from TD to VCC
23 ns
VCC = 5V, 3nF Load, 90% to 10%, 100k resistor from
TD to VCC
18 ns
VCC = 5V, 3nF Load, 90% to 10%, 330k resistor from
TD to VCC
15 ns
VCC = 5V, 3nF Load, 90% to 10%, 910k resistor from
TD to VCC
7ns
VCC = 5V, 3nF Load, 90% to 10%,
short resistor from TD to GND
18 ns
LGATE Fall to UGATE Rise Time t
PDLFUR
VCC = 5V, 3nF Load, 90% to 10%,
short resistor from TD to GND
40 ns
VCC = 5V, 3nF Load, 90% to 10%, 100k resistor from
TD to GND
25 ns
VCC = 5V, 3nF Load, 90% to 10%, 360k resistor from
TD to GND
17 ns
VCC = 5V, 3nF Load, 90% to 10%,
short resistor from TD to VCC
27 ns
OUTPUT (Note 6)
Upper Drive Source Current I_U_SOURCE VCC = 5V, 3nF load 2 A
Upper Drive Source Impedance R_U_SOURCE 20mA source current 1
Upper Drive Sink Current I_U_SINK VCC = 5V, 3nF load 2 A
Upper Drive Sink Impedance R_U_SINK 20mA sink current 1
Lower Drive Source Current I_L_SOURCE VCC = 5V, 3nF load 2 A
Lower Drive Source Impedance R_L_SOURCE 20mA source current 1
Lower Drive Sink Current I_L_SINK VCC = 5V, 3nF load 4 A
Lower Drive Sink Impedance R_L_SINK 20mA sink current 0.4
NOTES:
6. Limits established by characterization and are not production tested.
7. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted. Boldface limits apply over the operating
temperature range. (Continued)
PARAMETER SYMBOL TEST CONDITIONS
MIN
(Note 7) TYP
MAX
(Note 7) UNITS
ISL6627
6
FN6992.1
January 24, 2014
Operation and Adaptive Shoot-Through
Protection
Designed for high speed switching, the ISL6627 MOSFET driver
controls both high-side and low-side N-Channel FETs from one
externally-provided PWM signal.
A rising transition on PWM initiates the turn-off of the lower
MOSFET (see “Timing Diagram”). After a short propagation delay
[t
PDLL
], the lower gate begins to fall. Typical fall times [t
FL
] are
provided in the “Electrical Specifications” on page 4. Adaptive
shoot-through circuitry monitors the LGATE voltage and turns on
the upper gate following a short delay time [t
PDHU
] after the LGATE
voltage drops below ~1V. The user also has the option to program
the propagation delay as described in “Deadtime Programming”
on page 6. The upper gate drive then begins to rise [t
RU
] and the
upper MOSFET turns on.
A falling transition on PWM indicates the turn-off of the upper
MOSFET and the turn-on of the lower MOSFET. A short propagation
delay [t
PDLU
] is encountered before the upper gate begins to fall
[t
FU
]. The adaptive shoot-through circuitry monitors the UGATE-
PHASE voltage and turns on the lower MOSFET a short delay time
[t
PDHL
], after the upper MOSFET’s gate voltage drops below 1V.
The lower gate then rises [t
RL
], turning on the lower MOSFET.
These methods prevent both the lower and upper MOSFETs from
conducting simultaneously (shoot-through), while adapting the
dead time to the gate charge characteristics of the MOSFETs being
used. The user also has the option to program the propagation
delay as described in “Deadtime Programming” on page 6.
This driver is optimized for voltage regulators with a large step
down ratio. The lower MOSFET is usually sized larger compared to
the upper MOSFET because the lower MOSFET conducts for a
longer time during a switching period. The lower gate driver is
therefore sized much larger to meet this application requirement.
The 0.4Ω ON-resistance and 4A sink current capability enable the
lower gate driver to absorb the charge injected into the lower gate
through the drain-to-gate capacitor of the lower MOSFET and help
prevent shoot through caused by the self turn-on of the lower
MOSFET due to high dV/dt of the switching node.
Advanced PWM Protocol (Patent Pending)
The advanced PWM protocol of ISL6627 is specifically designed
to work with Intersil VR11.1 and VR12 controllers. When
ISL6627 detects a PSI# protocol sent by an Intersil
VR11.1/VR12 controller, it turns on diode emulation operation;
otherwise, it remains in normal CCM PWM mode.
Note that for a PWM low to tri-level (2.5V) transition, the LGATE
will not turn off until the its diode emulation minimum ON-time
of 330ns (typically) passes.
Diode Emulation
Diode emulation allows for higher converter efficiency under
light-load situations. With diode emulation active, the ISL6627
detects the zero current crossing of the output inductor and turns
off LGATE, preventing the low side MOSFET from sinking current
and ensuring discontinuous conduction mode (DCM) is achieved.
In DCM mode, LGATE has a minimum ON-time of 330ns
(typically).
Deadtime Programming
The part provides the user with the option to program either of the
two gate propagation delays (as defined in Figure 3) in order to
optimize the deadtime and maximize the efficiency of the circuit.
Tying the TD pin to either GND or VCC through a specified-value
resistor leads the driver to operate in fixed gate propagation delay
mode. Leaving the TD pin floating results in the driver operating
in adaptive deadtime mode. Refer to Table 1 for typical
programming resistor value options. Propagation delay has a
typical tolerance of 30%. As actual deadtime depends on FET
switching transition characteristics, while operating in fixed
propagation delay mode, the user needs to monitor the gate
transitions under worst-case operating conditions and use
appropriate design margin to prevent eventual shoot-through due
to insufficient dead time.
FIGURE 2. TIMING DIAGRAM
PWM
UGATE
LGATE
t
FL
t
PDHU
t
PDLL
t
RL
t
TSSHD
t
PDTS
t
PDTS
1.6V<PWM<3.2V
1.1V<PWM<2.8V
t
FU
t
RU
t
PDLU
t
PDHL
t
UG_OFF_DB
t
PDLFUR
t
PDUFLR

ISL6627IRZ

Mfr. #:
Manufacturer:
Renesas / Intersil
Description:
Gate Drivers SYNCH BUCK MSFT 5V DRVR VR12 3X3
Lifecycle:
New from this manufacturer.
Delivery:
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