RT8204L
7
DS8204L-04 April 2011 www.richtek.com
Note 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for
stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may remain possibility to affect device reliability.
Note 2. θ
JA
is measured in natural convection at T
A
= 25°C on a high-effective thermal conductivity four- layer test board of
JEDEC 51-7 thermal measurement standard. The measurement case position of θ
JC
is on the exposed pad of the
package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Parameter Symbol Test Conditions Min Typ Max Unit
EN/DEM = VDD -- 1 10
Logic Input Current
EN/DEM = 0 −10 1 --
μA
PGOOD (upper side threshold decide by OV threshold)
Trip Threshold (falling)
Measured at FB, with respect to
reference, no load. Hysteresis = 3%
87 90 93 %
Fault Propagation Delay
Falling edge, FB forced below
PGOOD trip threshold
-- 2.5 -- μs
Output Low Voltage I
SINK
= 1mA -- -- 0.4 V
Leakage Current High state, forced to 5V -- -- 1 μA
LDO Controller
Quiescent Current I
Q_LDO
PWM Off, LDO On, I
LOAD
= 0A -- -- 400 μA
Logic-High V
IH_LDO
1.2 -- --
LEN Threshold
Voltage
Logic-Low V
IL_LDO
-- -- 0.8
V
LEN Input Current I
IN_LEN
V
LEN
= 5V, (internal pull low) -- -- 10 μA
LFB Reference Voltage V
REF_LFB
0.739 0.75 0.761 V
LFB Input Current I
IN_LFB
−1 -- 1 μA
Sourcing, LFB = 0.72 1.4 2 --
LDRV Output Current I
OUT_LDRV
Sinking, LFB = 0.78 1.4 2 --
mA
Soft-Start Time V
LFB
= 0.75V -- 2 -- ms
Output Under Voltage
Protection Threshold
Measured at LFB pin 40 50 60 %
LDO Under Voltage
Blanking Time
-- 4 -- ms
Power Good Threshold
(falling)
Measured at LFB pin 87 90 93 %
LDO Power Good
Propagation Delay
Falling edge, LFB forced below
LPGOOD trip threshold
-- 2.5 -- μs
LPGOOD Low Voltage I
SINK
= 1mA -- -- 0.4 V
Leakage Current High state, forced to 5V -- -- 1 μA
Thermal shutdown T
SD _LDO
Hysteresis = 10°C -- 155 -- °C
Thermal shutdown
Hysteresis
ΔT
SD_LDO
-- 10 -- °C
