13/21
M48Z35AY, M48Z35AV
Figure 12. Power Down/Up Mode AC Waveforms
Table 9. Power Down/Up AC Characteristics
Note: 1. Valid for Ambient Operating Temperature: T
A
= 0 to 70°C or –40 to 85°C; V
CC
= 4.5 to 5.5V or 3.0 to 3.6V (except where noted).
2. V
PFD
(max) to V
PFD
(min) fall time of less than t
F
may result in deselection/write protection not occurring until 200µs after V
CC
pass-
es V
PFD
(min).
3. V
PFD
(min) to V
SS
fall time of less than t
FB
may cause corruption of RAM data.
4. t
REC
(min) = 20ms for industrial temperature Grade (6) device.
Table 10. Power Down/Up Trip Points DC Characteristics
Note: 1. All voltages referenced to V
SS
.
2. Valid for Ambient Operating Temperature: T
A
= 0 to 70°C or –40 to 85°C; V
CC
= 4.5 to 5.5V or 3.0 to 3.6V (except where noted).
3. At 25°C, V
CC
= 0V.
Symbol
Parameter
(1)
Min Max Unit
t
PD
E or W at V
IH
before Power Down
s
t
F
(2)
V
PFD
(max) to V
PFD
(min) V
CC
Fall Time
300 µs
t
FB
(3)
V
PFD
(min) to V
SS
V
CC
Fall Time
10 µs
t
R
V
PFD
(min) to V
PFD
(max)
V
CC
Rise Time
10 µs
t
RB
V
SS
to V
PFD
(min) V
CC
Rise Time
s
t
REC
(4)
V
PFD
(max) to Inputs Recognized
40 200 ms
Symbol
Parameter
(1,2)
Min Typ Max Unit
V
PFD
Power-fail Deselect Voltage
M48Z35AY 4.2 4.35 4.5 V
M48Z35AV 2.7 2.9 3.0 V
V
SO
Battery Back-up Switchover Voltage
M48Z35AY 3.0 V
M48Z35AV
V
PFD
– 100mV
V
t
DR
(3)
Expected Data Retention Time 10 YEARS
AI01168C
V
CC
INPUTS
(PER CONTROL INPUT)
OUTPUTS
DON'T CARE
HIGH-Z
tF
tFB
tR
tPD
tRB
tDR
VALID VALID
(PER CONTROL INPUT)
RECOGNIZEDRECOGNIZED
V
PFD
(max)
V
PFD
(min)
V
SO
tREC
M48Z35AY, M48Z35AV
14/21
V
CC
Noise And Negative Going Transients
I
CC
transients, including those produced by output
switching, can produce voltage fluctuations, re-
sulting in spikes on the V
CC
bus. These transients
can be reduced if capacitors are used to store en-
ergy which stabilizes the V
CC
bus. The energy
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic by-
pass capacitor value of 0.1µF (see Figure 13) is
recommended in order to provide the needed fil-
tering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg-
ative voltage spikes on V
CC
that drive it to values
below V
SS
by as much as one volt. These negative
spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, ST recommends connecting
a schottky diode from V
CC
to V
SS
(cathode con-
nected to V
CC
, anode to V
SS
). (Schottky diode
1N5817 is recommended for through hole and
MBRS120T3 is recommended for surface mount).
Figure 13. Supply Voltage Protection
AI02169
V
CC
0.1µF DEVICE
V
CC
V
SS
15/21
M48Z35AY, M48Z35AV
PACKAGE MECHANICAL INFORMATION
Figure 14. PCDIP28 – 28-pin Plastic DIP, battery CAPHAT™, Package Outline
Note: Drawing is not to scale.
Table 11. PMDIP28 – 28-pin Plastic DIP, battery CAPHAT™, Package Mechanical Data
Symb
mm inches
Typ Min Max Typ Min Max
A 8.89 9.65 0.350 0.380
A1 0.38 0.76 0.015 0.030
A2 8.38 8.89 0.330 0.350
B 0.38 0.53 0.015 0.021
B1 1.14 1.78 0.045 0.070
C 0.20 0.31 0.008 0.012
D 39.37 39.88 1.550 1.570
E 17.83 18.34 0.702 0.722
e1 2.29 2.79 0.090 0.110
e3 29.72 36.32 1.170 1.430
eA 15.24 16.00 0.600 0.630
L 3.05 3.81 0.120 0.150
N 28 28
PCDIP
A2
A1
A
L
B1 B e1
D
E
N
1
C
eA
e3

M48Z35AV-10PC1

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
IC NVSRAM 256K PARALLEL 28PCDIP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet