M48Z35AY, M48Z35AV
4/21
Figure 4. DIP Connections Figure 5. SOIC Connections
Figure 6. Block Diagram
A1
A0
DQ0
A7
A4
A3
A2
A6
A5
A13
A10
A8
A9
DQ7
W
A11
G
E
DQ5DQ1
DQ2
DQ3V
SS
DQ4
DQ6
A12
A14 V
CC
AI02782B
M48Z35AY
M48Z35AV
8
1
2
3
4
5
6
7
9
10
11
12
13
14
16
15
28
27
26
25
24
23
22
21
20
19
18
17
AI02783
8
2
3
4
5
6
7
9
10
11
12
13
14
22
21
20
19
18
17
16
15
28
27
26
25
24
23
1
A1
A0
DQ0
A7
A4
A3
A2
A6
A5
A13
A10
A8
A9
DQ7
W
A11
G
E
DQ5DQ1
DQ2
DQ3V
SS
DQ4
DQ6
A12
A14 V
CC
M48Z35AY
M48Z35AV
AI01619B
LITHIUM
CELL
V
PFD
V
CC
V
SS
VOLTAGE SENSE
AND
SWITCHING
CIRCUITRY
32K x 8
SRAM ARRAY
A0-A14
DQ0-DQ7
E
W
G
POWER
5/21
M48Z35AY, M48Z35AV
MAXIMUM RATING
Stressing the device above the rating listed in the
“Absolute Maximum Ratings” table may cause
permanent damage to the device. These are
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rat-
ing conditions for extended periods may affect de-
vice reliability. Refer also to the
STMicroelectronics SURE Program and other rel-
evant quality documents.
Table 2. Absolute Maximum Ratings
Note: 1. For DIP package: Soldering temperature not to exceed 260°C for 10 seconds (total thermal budget not to exceed 150°C for longer
than 30 seconds).
2. For SO package: Reflow at peak temperature of 215°C to 225°C for < 60 seconds (total thermal budget not to exceed 180°C for
between 90 to 120 seconds).
CAUTION: Negative undershoots below –0.3V are not allowed on any pin while in the Battery Back-up mode.
CAUTION: Do NOT wave solder SOIC to avoid damaging SNAPHAT sockets.
Symbol Parameter Value Unit
T
A
Ambient Operating Temperature
Grade 1 0 to 70 °C
Grade 6 –40 to 85 °C
T
STG
Storage Temperature (V
CC
Off, Oscillator Off)
SNAPHAT
®
–40 to 85 °C
SOIC –55 to 125 °C
T
SLD
(1)
Lead Solder Temperature for 10 seconds 260 °C
V
IO
Input or Output Voltages
M48Z35AY –0.3 to 7.0 V
M48Z35AV –0.3 to 4.6 V
V
CC
Supply Voltage
M48Z35AY –0.3 to 7.0 V
M48Z35AV –0.3 to 4.6 V
I
O
Output Current 20 mA
P
D
Power Dissipation 1 W
M48Z35AY, M48Z35AV
6/21
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, as well as the DC and AC
characteristics of the device. The parameters in
the following DC and AC Characteristic tables are
derived from tests performed under the Measure-
ment Conditions listed in the relevant tables. De-
signers should check that the operating conditions
in their projects match the measurement condi-
tions when using the quoted parameters.
Table 3. Operating and AC Measurement Conditions
Note: Output Hi-Z is defined as the point where data is no longer driven.
Figure 7. AC Measurement Load Circuit
Note: 50pF for M48Z35AV.
Table 4. Capacitance
Note: 1. Effective capacitance measured with power supply at 5V. Sampled only, not 100% tested.
2. At 25°C, f = 1MHz.
3. Outputs deselected.
Parameter M48Z35AY M48Z35AV Unit
Supply Voltage (V
CC
)
4.5 to 5.5V 3.0 to 3.6 V
Ambient Operating Temperature (T
A
)
Grade 1 0 to 70 0 to 70 °C
Grade 6 –40 to 85 –40 to 85 °C
Load Capacitance (C
L
)
100 50 pF
Input Rise and Fall Times 5 5ns
Input Pulse Voltages 0 to 3 0 to 3 V
Input and Output Timing Ref. Voltages 1.5 1.5 V
AI03211
C
L
= 100pF or
5pF
C
L
includes JIG capacitance
645
DEVICE
UNDER
TEST
1.75V
Symbol
Parameter
(1,2)
Min Max Unit
C
IN
Input Capacitance 10 pF
C
IO
(3)
Input / Output Capacitance 10 pF

M48Z35AV-10PC1

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
IC NVSRAM 256K PARALLEL 28PCDIP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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