7/21
M48Z35AY, M48Z35AV
Table 5. DC Characteristics
Note: 1. Valid for Ambient Operating Temperature: T
A
= 0 to 70°C or –40 to 85°C; V
CC
= 4.5 to 5.5V or 3.0 to 3.6V (except where noted).
2. Outputs deselected.
3. Negative spikes of –1V allowed for up to 10ns once per cycle.
OPERATING MODES
The M48Z35AY/V also has its own Power-fail De-
tect circuit. The control circuitry constantly moni-
tors the single power supply for an out of tolerance
condition. When V
CC
is out of tolerance, the circuit
write protects the SRAM, providing a high degree
of data security in the midst of unpredictable sys-
tem operation brought on by low V
CC
. As V
CC
falls
below approximately V
SO
, the control circuitry con-
nects the battery which maintains data until valid
power returns.
Table 6. Operating Modes
Note: X = V
IH
or V
IL
; V
SO
= Battery Back-up Switchover Voltage.
1. See Table 10, page 13 for details.
Symbol Parameter
Test Condition
(1)
Min Max Unit
I
LI
(2)
Input Leakage Current
0V V
IN
V
CC
±1 µA
I
LO
(2)
Output Leakage Current
0V V
OUT
V
CC
±5 µA
I
CC
Supply Current Outputs open 50 mA
I
CC1
Supply Current (TTL Standby)
E
= V
IH
3mA
I
CC2
Supply Current (CMOS Standby)
E
= V
CC
– 0.2V
3mA
V
IL
(3)
Input Low Voltage –0.3 0.8 V
V
IH
Input High Voltage 2.2
V
CC
+ 0.3
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4 V
V
OH
Output High Voltage
I
OH
= –1mA
2.4 V
Mode
V
CC
E G W DQ0-DQ7 Power
Deselect
4.5 to 5.5V
or
3.0 to 3.6V
V
IH
X X High Z Standby
WRITE
V
IL
X
V
IL
D
IN
Active
READ
V
IL
V
IL
V
IH
D
OUT
Active
READ
V
IL
V
IH
V
IH
High Z Active
Deselect
V
SO
to V
PFD
(min)
(1)
X X X High Z CMOS Standby
Deselect
V
SO
(1)
X X X High Z Battery Back-up Mode
M48Z35AY, M48Z35AV
8/21
READ Mode
The M48Z35AY/V is in the READ Mode whenever
W
(WRITE Enable) is high, E (Chip Enable) is low.
The device architecture allows ripple-through ac-
cess of data from eight of 264,144 locations in the
static storage array. Thus, the unique address
specified by the 15 Address Inputs defines which
one of the 32,768 bytes of data is to be accessed.
Valid data will be available at the Data I/O pins
within Address Access time (t
AVQV
) after the last
address input signal is stable, providing that the E
and G access times are also satisfied. If the E and
G
access times are not met, valid data will be
available after the latter of the Chip Enable Access
time (t
ELQV
) or Output Enable Access time
(t
GLQV
).
The state of the eight three-state Data I/O signals
is controlled by E
and G. If the outputs are activat-
ed before t
AVQV
, the data lines will be driven to an
indeterminate state until t
AVQV
. If the Address In-
puts are changed while E
and G remain active,
output data will remain valid for Output Data Hold
time (t
AXQX
) but will go indeterminate until the next
Address Access.
Figure 8. READ Mode AC Waveforms
Note: WRITE Enable (W) = High.
AI00925
tAVAV
tAVQV tAXQX
tELQV
tELQX
tEHQZ
tGLQV
tGLQX
tGHQZ
VALID
A0-A14
E
G
DQ0-DQ7
VALID
9/21
M48Z35AY, M48Z35AV
Table 7. READ Mode AC Characteristics
Note: 1. Valid for Ambient Operating Temperature: T
A
= 0 to 70°C or –40 to 85°C; V
CC
= 4.5 to 5.5V or 3.0 to 3.6V (except where noted).
2. C
L
= 5pF (see Figure 7, page 6).
Symbol
Parameter
(1)
M48Z35AY M48Z35AV
Unit–70 –100
Min Max Min Max
t
AVAV
READ Cycle Time 70 100 ns
t
AVQV
Address Valid to Output Valid 70 100 ns
t
ELQV
Chip Enable Low to Output Valid 70 100 ns
t
GLQV
Output Enable Low to Output Valid 35 50 ns
t
ELQX
(2)
Chip Enable Low to Output Transition 5 10 ns
t
GLQX
(2)
Output Enable Low to Output Transition 5 5 ns
t
EHQZ
(2)
Chip Enable High to Output Hi-Z 25 50 ns
t
GHQZ
(2)
Output Enable High to Output Hi-Z 25 40 ns
t
AXQX
Address Transition to Output Transition 10 10 ns

M48Z35AV-10PC1

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
IC NVSRAM 256K PARALLEL 28PCDIP
Lifecycle:
New from this manufacturer.
Delivery:
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