NXP Semiconductors
PSMN027-100XS
N-channel 100V 26.8 mΩ standard level MOSFET in TO220F (SOT186A)
© NXP B.V. 2012. All rights reserved.
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Date of release: 6 March 2012
Document identifier: PSMN027-100XS
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
12. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5
6 Isolation characteristics . . . . . . . . . . . . . . . . . . .5
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .11
9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12
10 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
10.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
10.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
10.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
11 Contact information. . . . . . . . . . . . . . . . . . . . . .14
