PSMN027-100XS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 6 March 2012 6 of 15
NXP Semiconductors
PSMN027-100XS
N-channel 100V 26.8 mΩ standard level MOSFET in TO220F (SOT186A)
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown voltage I
D
= 250 µA; V
GS
=0V; T
j
= 25 °C 100 - - V
I
D
= 250 µA; V
GS
=0V; T
j
= -55 °C 90 - - V
V
GS(th)
gate-source threshold voltage I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 10; see Figure 11
234V
I
D
=1mA; V
DS
=V
GS
; T
j
=175°C;
see Figure 10
1--V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 10
--4.6V
I
DSS
drain leakage current V
DS
=100V; V
GS
=0V; T
j
=25°C --2µA
V
DS
=100V; V
GS
=0V; T
j
=100°C--40µA
I
GSS
gate leakage current V
GS
=20V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
V
GS
=-20V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
R
DSon
drain-source on-state resistance V
GS
=10V; I
D
=5A; T
j
=25°C;
see Figure 12; see Figure 13
- 21 26.8 mΩ
V
GS
=10V; I
D
=5A; T
j
=100°C;
see Figure 13
- 36.8 46.9 mΩ
V
GS
=10V; I
D
=5A; T
j
=175°C;
see Figure 13
- 58.8 75 mΩ
R
G
internal gate resistance (AC) f = 1 MHz - 0.92 - Ω
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=5A; V
DS
=50V; V
GS
=10V;
see Figure 14
; see Figure 15
-30-nC
Q
GS
gate-source charge - 6.5 - nC
Q
GS(th)
pre-threshold gate-source
charge
-4.5-nC
Q
GS(th-pl)
post-threshold gate-source
charge
-2-nC
Q
GD
gate-drain charge - 9.5 - nC
V
GS(pl)
gate-source plateau voltage I
D
=5A; V
DS
= 50 V; see Figure 14;
see Figure 15
-4.4-V
C
iss
input capacitance V
DS
=50V; V
GS
=0V; f=1MHz;
T
j
=25°C; see Figure 16;
see Figure 17
- 1624 - pF
C
oss
output capacitance V
DS
=50V; V
GS
=0V; f=1MHz;
T
j
=25°C; see Figure 17
-115-pF
C
rss
reverse transfer capacitance V
DS
=50V; V
GS
=0V; f=1MHz;
T
j
=25°C; see Figure 16;
see Figure 17
-74-pF
t
d(on)
turn-on delay time V
DS
=50V; R
L
=10Ω; V
GS
=10V;
R
G(ext)
=4.7Ω; T
j
=25°C
-12-ns
t
r
rise time -8.5-ns
t
d(off)
turn-off delay time - 25 - ns
t
f
fall time - 9.5 - ns
