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BFG35,115

P1-P3P4-P6P7-P9P10-P12P13-P14
DATA SHEET
Product specification
Supersedes data of 1995 Sep 12
1999 Aug 24
DISCRETE SEMICONDUCTORS
BFG35
NPN 4 GHz wideband transistor
1999 Aug 24 2
NXP Semiconductors Product specification
NPN 4 GHz wideband transistor BFG35
DESCRIPTION
NPN planar epitaxial transistor
mounted in a plastic SOT223
envelope, intended for wideband
amplifier applications. It features high
output voltage capabilities.
PINNING
PIN DESCRIPTION
1emitter
2base
3emitter
4 collector
Fig.1 SOT223.
lfpage
4
123
MSB002 - 1
Top view
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the collector tab.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CEO
collector-emitter voltage open base 18 V
I
C
DC collector current 150 mA
P
tot
total power dissipation up to T
s
=135C (note 1) 1W
h
FE
DC current gain I
C
=100mA; V
CE
=10V; T
j
=25C25 70
f
T
transition frequency I
C
=100mA; V
CE
=10V;
f=500MHz; T
amb
=25C
4 GHz
G
UM
maximum unilateral power gain I
C
=100mA; V
CE
=10V;
f=500MHz; T
amb
=25C
15 dB
I
C
=100mA; V
CE
=10V;
f=800MHz; T
amb
=25C
11 dB
V
o
output voltage I
C
=100mA; V
CE
=10V;
d
im
= 60 dB; R
L
=75;
f
(p+qr)
= 793.25 MHz; T
amb
=25C
750 mV
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter 25 V
V
CEO
collector-emitter voltage open base 18 V
V
EBO
emitter-base voltage open collector 2V
I
C
DC collector current 150 mA
P
tot
total power dissipation up to T
s
=135C (note 1) 1W
T
stg
storage temperature 65 +150 C
T
j
junction temperature 175 C
1999 Aug 24 3
NXP Semiconductors Product specification
NPN 4 GHz wideband transistor BFG35
THERMAL CHARACTERISTICS
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
=25C unless otherwise specified.
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
2. d
im
= 60 dB (DIN 45004B); I
C
=100mA; V
CE
=10V; R
L
=75; T
amb
=25C
V
p
=V
o
at d
im
= 60 dB; f
p
=795.25MHz;
V
q
=V
o
6dB; f
q
=803.25MHz;
V
r
=V
o
6dB; f
r
=805.25MHz;
measured at f
(p+qr)
= 793.25 MHz.
3. d
im
= 60 dB (DIN 45004B); I
C
=100mA; V
CE
=10V; R
L
=75; T
amb
=25C
V
p
=V
o
at d
im
= 60 dB; f
p
=445.25MHz;
V
q
=V
o
6dB; f
q
=453.25MHz;
V
r
=V
o
6dB; f
r
=455.25MHz;
measured at f
(p+qr)
= 443.25 MHz.
4. I
C
=60mA; V
CE
=10V; R
L
=75;
V
p
=V
q
=V
o
= 50 dBmV;
f
(p+q)
=450MHz; f
p
=50MHz; f
q
=400MHz.
5. I
C
=60mA; V
CE
=10V; R
L
=75;
V
p
=V
q
=V
O
=50dBmV;
f
(p+q)
=810MHz; f
p
=250MHz; f
q
=560MHz.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point up to T
s
=135C (note 1) 40 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current I
E
=0; V
CB
=10V 1 A
h
FE
DC current gain I
C
=100mA; V
CE
= 10 V 25 70
C
c
collector capacitance I
E
=i
e
=0; V
CB
=10V; f=1MHz 2 pF
C
e
emitter capacitance I
C
=i
c
=0; V
EB
=0.5V; f=1MHz 10 pF
C
re
feedback capacitance I
C
=0; V
CE
=10V; f=1MHz 1.2 pF
f
T
transition frequency I
C
=100mA; V
CE
=10V;
f = 500 MHz; T
amb
=25C
4 GHz
G
UM
maximum unilateral power gain
(note 1)
I
C
=100mA; V
CE
=10V;
f = 500 MHz; T
amb
=25C
15 dB
I
C
=100mA; V
CE
=10V;
f = 800 MHz; T
amb
=25C
11 dB
V
o
output voltage note 2 750 mV
note 3 800 mV
d
2
second order intermodulation
distortion
note 4 55 dB
note 5 57 dB
G
UM
10
s
21
2
1s
11
2
–1s
22
2
–
--------------------------------------------------------
dB.log=
P1-P3P4-P6P7-P9P10-P12P13-P14

BFG35,115

Mfr. #:
Buy BFG35,115
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors NPN 10V 150mA 4GHZ
Lifecycle:
New from this manufacturer.
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