1999 Aug 24 4
NXP Semiconductors Product specification
NPN 4 GHz wideband transistor BFG35
Fig.2 Intermodulation and second harmonic test circuit.
handbook, full pagewidth
MBB284
DUT
V
BB
C3
R1
L1C1
C2
L2
input
75
R2
L6
R3 R4
L3
C4
C7
C5
C6
L5
output
75
V
CC
L4
Ω
Ω
List of components (see test circuit)
Note
1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (
r
=2.2);
thickness
1
16
inch; thickness of copper sheet
1
32
inch.
DESIGNATION DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C3, C5, C6 multilayer ceramic capacitor 10 nF 2222 590 08627
C2, C7 multilayer ceramic capacitor 1 pF 2222 851 12108
C4 (note 1) miniature ceramic plate capacitor 10 nF 2222 629 08103
L1 microstrip line 75 length 7mm;
width 2.5 mm
L2 microstrip line 75 length 22mm;
width 2.5 mm
L3 (note 1) 1.5 turns 0.4 mm copper wire int. dia. 3 mm;
winding pitch 1 mm
L4 microstripline 75 length 19 mm;
width 2.5 mm
L5 Ferroxcube choke 5 H 3122 108 20153
L6 (note 1) 0.4 mm copper wire 25 nH length 30 mm
R1 metal film resistor 10 k 2322 180 73103
R2 (note 1) metal film resistor 200 2322 180 73201
R3, R4 metal film resistor 27 2322 180 73279
