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BFG35,115
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
1999 Aug 24
7
NXP Semico
nductors
Product specification
NPN 4 GHz wideband transistor
BFG35
Fig.8
Maximum unilateral po
wer gain as a
function of frequenc
y.
I
C
=1
0
0m
A
;
V
CE
=1
0V
;
T
amb
=2
5
C.
handbook, halfpage
40
0
20
30
10
MBB386
10
2
10
3
10
4
10
f (MHz)
G
UM
(dB)
Fig.9
Intermodulation disto
rtion as a function of
collector current
.
V
CE
=1
0V
;
V
o
=8
0
0m
V
;
f
(p+q
r)
= 443.25 MHz; T
amb
=2
5
C.
handbook, halfpage
MBB385
20
120
45
70
65
60
55
50
40
60
80
100
I (mA)
C
d
(dB)
im
Fig.10
Intermodulation distortion as a fun
ction of
collector current
.
V
CE
=1
0V
;
V
o
=7
5
0m
V
;
f
(p+q
r)
= 793.25 MHz; T
amb
=2
5
C.
handbook, halfpage
MBB383
20
120
45
70
65
60
55
50
40
60
80
100
I (mA)
C
d
(dB)
im
Fig.11
Second
order intermodulation
distortion as
a function of colle
ctor current.
V
CE
=1
0V
;
V
o
= 50 dBmV; f
(p+q)
= 450 MHz; T
amb
=2
5
C.
handbook, halfpage
MBB382
20
120
45
70
65
60
55
50
40
60
80
100
I (mA)
C
d
(dB)
2
1999 Aug 24
8
NXP Semico
nductors
Product specification
NPN 4 GHz wideband transistor
BFG35
Fig.12
Second
order intermodulation
distortion as
a function of colle
ctor current.
V
CE
=1
0V
;
V
o
= 50 dBmV; f
(p+q)
= 810 MHz; T
amb
=2
5
C.
handbook, halfpage
MBB384
20
120
45
70
65
60
55
50
40
60
80
100
I (mA)
C
d
(dB)
2
1999 Aug 24
9
NXP Semico
nductors
Product specification
NPN 4 GHz wideband transistor
BFG35
Fig.13 Common emitter input reflection coeffic
ient (S
11
).
I
C
=1
0
0m
A
;
V
CE
=1
0V
;
T
amb
=2
5
C; Z
o
=5
0
.
handbook, full pagewidth
MBB380
10
25
50
100
250
10
25
50
100
250
0
+ j
– j
0
3 GHz
10
25
50
100
250
Fig.14 Common emitter forward transmiss
ion coefficient (S
21
).
I
C
=1
0
0m
A
;
V
CE
=1
0V
;
T
amb
=2
5
C.
handbook, full pagewidth
MBB286
0
o
30
o
60
o
90
o
120
o
150
o
180
o
150
o
120
o
90
o
60
o
30
o
40
20
30
50
10
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
BFG35,115
Mfr. #:
Buy BFG35,115
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors NPN 10V 150mA 4GHZ
Lifecycle:
New from this manufacturer.
Delivery:
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