pdf: 09005aef81a2f214/source: 09005aef81a2f22d Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF18C64_128_256x72F.fm - Rev. B 9/07 EN
13 ©2005 Micron Technology, Inc. All rights reserved.
1GB, 2GB (x72, SR) 240-Pin DDR2 SDRAM FBDIMM
Serial Presence-Detect
33
Bits 7:4: ΔT
C
(MAX) (DRAM case temperature difference between
MAX case temperature and baseline MAX case temperature), the
baseline MAX case temperature is 85°C; Bits 3:0: DT4R4W Δ (case
temperature rise difference between I
DD4R/page open burst
READ and I
DD4W/page open burst WRITE operations)
–5251
34
Thermal resistance of DRAM device package from top (case) to
ambient (PSI T-A DRAM) at still air condition, based on JESD51-2
standard
–3231
35
DT0/T
C
mode bits: Bits 7:2: Case temperature rise from ambient
due to I
DD0/ACTIVATE PRECHARGE operation minus 2.8°C offset
temperature; Bit 1: Double refresh mode bit; Bit 0: High
temperature self refresh rate support indication
–0404
36
DT2N/DT2Q: Case temperature rise from ambient due to
I
DD2N precharge STANDBY operation for UDIMM and due to
IDD2Q/precharge quiet STANDBY operation for RDIMM
–0E0F
37
DT2P: Case temperature rise from ambient due to I
DD2P/
PRECHARGE POWER-DOWN operation
–0A0A
38
DT3N: Case temperature rise from ambient due to I
DD3N/ACTIVE
STANDBY operation
–0D0B
39
DT4R/mode bit: Bits 7:1: Case temperature rise from ambient due
to I
DD4R/page open BURST READ operation; Bit 0: Mode bit to
specify if DT4W is greater than or less than DT4R
–1818
40
DT5B: Case temperature rise from ambient due to I
DD5B/BURST
REFRESH operation
–0F12
41
DT7: Case temperature rise from ambient due to I
DD7/bank
interleave READ MODE operation
–1215
42–78
FBDIMM reserved bytes
–0000
79
FBDIMM ODT definition
75Ω 01 01
80
Reserved
00000
117–118
Module ID: Module manufacturer’s JEDEC ID code
MICRON 802C 802C
119
Module ID: Module manufacturing location
1–12 01–0C 01–0C
120–121
Module ID: Module manufacturing date
–Variable
data
Variable
data
122–125
Module ID: Module serial number
–Variable
data
Variable
data
128–145
Module part number
–Variable
data
Variable
data
146–147
Module revision code
–Variable
data
Variable
data
148–149
DRAM manufacturer’s JEDEC ID code
MICRON 802C 802C
152–175
Reserved for manufacturer-specific data
–FFFF
176–255
Reserved for customer-specific data
–FFFF
Table 19: Serial Presence-Detect Matrix – SDRAM Device and Module (continued)
Byte Description Entry 1GB 2GB
