Electrical specifications VNQ5E050MK-E
10/36 Doc ID 16374 Rev 2
Table 7. Logic inputs
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
IL
Input low level voltage 0.9 V
I
IL
Low level input current V
IN
= 0.9V 1 µA
V
IH
Input high level voltage 2.1 V
I
IH
High level input current V
IN
= 2.1V 10 µA
V
I(hyst)
Input hysteresis voltage 0.25 V
V
ICL
Input clamp voltage
I
IN
= 1mA
I
IN
= -1mA
5.5
-0.7
7V
V
V
CSDL
CS_DIS low level voltage 0.9 V
I
CSDL
Low level CS_DIS current V
CSD
= 0.9V 1 µA
V
CSDH
CS_DIS high level voltage 2.1 V
I
CSDH
High level CS_DIS current V
CSD
= 2.1V 10 µA
V
CSD(hyst)
CS_DIS hysteresis voltage 0.25 V
V
CSCL
CS_DIS clamp voltage
I
CSD
= 1mA
I
CSD
= -1mA
5.5
-0.7
7V
V
Table 8. Protections and diagnostics
(1)
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
limH
DC short circuit
current
V
CC
=13V
5V<V
CC
<28V
19 27 38
38
A
A
I
limL
Short circuit current
during thermal cycling
V
CC
= 13V; T
R
<T
j
<T
TSD
7A
T
TSD
Shutdown
temperature
150 175 200 °C
T
R
Reset temperature T
RS
+ 1 T
RS
+ 5 °C
T
RS
Thermal reset of
STATUS
135 °C
T
HYST
Thermal hysteresis
(T
TSD
-T
R
)
C
V
DEMAG
Turn-off output voltage
clamp
I
OUT
= 2A; V
IN
= 0; L= 6mH V
CC
-41 V
CC
-46 V
CC
-52 V
V
ON
Output voltage drop
limitation
I
OUT
= 0.1A;
T
j
= -40°C...150°C
(see Figure 6)
25 mV
VNQ5E050MK-E Electrical specifications
Doc ID 16374 Rev 2 11/36
Table 9. Current sense (8V<V
CC
<18V)
Symbol Parameter Test conditions Min. Typ. Max. Unit
K
0
I
OUT
/I
SENSE
I
OUT
= 0.05A;
V
SENSE
=0.5V; V
CSD
=0V;
T
j
= -40°C...150°C
1050 2110 3170
K
1
I
OUT
/I
SENSE
I
OUT
=1A;
V
SENSE
= 4V; V
CSD
=0V;
T
j
= -40°C...150°C
T
j
= 25°C...150°C
1510
1510
1890
1890
2650
2270
dK
1
/K
1
(1)
Current sense ratio
drift
I
OUT
=1A; V
SENSE
= 4V;
V
CSD
=0V;
T
J
=-40 °C to 150 °C
-13 13 %
K
2
I
OUT
/I
SENSE
I
OUT
=2A;
V
SENSE
= 4V; V
CSD
=0V;
T
j
= -40°C...150°C
T
j
= 25°C...150°C
1600
1600
1800
1800
2230
2000
dK
2
/K
2
(1)
Current sense ratio
drift
I
OUT
=2A; V
SENSE
= 4V;
V
CSD
= 0V;
T
J
=-40 °C to 150 °C
-8 8 %
K
3
I
OUT
/I
SENSE
I
OUT
=4A;
V
SENSE
= 4V; V
CSD
= 0V;
T
j
= -40°C...150°C
T
j
= 25°C...150°C
1620
1620
1770
1770
1990
1920
dK
3
/K
3
(1)
Current sense ratio
drift
I
OUT
= 4A; V
SENSE
= 4V;
V
CSD
= 0V;
T
J
=-40 °C to 150 °C
-6 6 %
I
SENSE0
Analog sense
leakage current
I
OUT
= 0A; V
SENSE
=0V;
V
CSD
= 5V; V
IN
=0V; T
j
= -40°C...150°C
V
CSD
= 0V; V
IN
=5V; T
j
= -40°C...150°C
I
OUT
= 2A; V
SENSE
=0V;
V
CSD
= 5V; V
IN
=5V; T
j
= -40°C...150°C
0
0
0
1
2
1
µA
µA
µA
I
OL
Open load on-state
current detection
threshold
V
IN
= 5V, 8V<V
CC
<18V
I
SENSE
= 5 µA
420mA
V
SENSE
Max analog sense
output voltage
I
OUT
= 4A; V
CSD
= 0V 5 V
V
SENSEH
Analog sense output
voltage in fault
condition
(2)
V
CC
= 13V; R
SENSE
= 10KΩ 8V
I
SENSEH
Analog sense output
current in fault
condition
(2)
V
CC
= 13V; V
SENSE
= 5V 9 mA
Electrical specifications VNQ5E050MK-E
12/36 Doc ID 16374 Rev 2
t
DSENSE1H
Delay response time
from falling edge of
CS_DIS pin
V
SENSE
<4V, 0.5A<Iout<4A
I
SENSE
= 90% of I
SENSE
max
(see Figure 4)
40 100 µs
t
DSENSE1L
Delay response time
from rising edge of
CS_DIS pin
V
SENSE
<4V, 0.5A<Iout<4A
I
SENSE
= 10% of I
SENSE
max
(see Figure 4)
520µs
t
DSENSE2H
Delay response time
from rising edge of
INPUT pin
V
SENSE
<4V, 0.5A<Iout<4A
I
SENSE
= 90% of I
SENSE
max
(see Figure 4)
80 250 µs
Δ
t
DSENSE2H
Delay response time
between rising edge
of output current and
rising edge of current
sense
V
SENSE
<4V,
I
SENSE
= 90% of I
SENSEMAX,
I
OUT
= 90% of I
OUTMAX
I
OUTMAX
=2A (see Figure 7)
60 µs
t
DSENSE2L
Delay response time
from falling edge of
INPUT pin
V
SENSE
<4V, 0.5A<Iout<4A
I
SENSE
= 10% of I
SENSE
max
(see Figure 4)
80 250 µs
1. Parameter guaranteed by design; it is not tested.
2. Fault condition includes: power limitation and overtemperature.
Table 9. Current sense (8V<V
CC
<18V) (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit

VNQ5E050MKTR-E

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Gate Drivers QUAD CH HI-SIDE DRVR W/ANALOG CRRNT SNSE
Lifecycle:
New from this manufacturer.
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