VNQ5E050MK-E Electrical specifications
Doc ID 16374 Rev 2 7/36
2 Electrical specifications
Figure 3. Current and voltage conventions
Note: V
Fn
= V
OUTn
- V
CC
during reverse battery condition.
2.1 Absolute maximum ratings
Stressing the device above the ratings listed in the “Absolute maximum ratings” tables may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions reported in this section for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
V
Fn
I
S
I
GND
V
CC
V
CC
OUTPUTn
INPUTn
V
INn
V
SENSEn
GND
CS_DIS
I
CSD
V
CSD
I
INn
CURRENT
S
ENSEn
V
OUTn
I
OUTn
I
SENSEn
Table 3. Absolute maximum ratings
Symbol Parameter Value Unit
V
CC
DC supply voltage 41 V
-V
CC
Reverse DC supply voltage 0.3 V
- I
GND
DC reverse ground pin current 200 mA
I
OUT
DC output current Internally limited A
- I
OUT
Reverse DC output current 20 A
I
IN
DC input current -1 to 10 mA
I
CSD
DC current sense disable input current -1 to 10 mA
-I
CSENSE
DC reverse CS pin current 200 mA
V
CSENSE
Current sense maximum voltage
V
CC
- 41 to
+V
CC
V
E
MAX
Maximum switching energy (single pulse)
(L= 3mH; R
L
=0Ω; V
bat
=13.5V; T
jstart
=150ºC; I
OUT
= I
limL
(Typ.))
104 mJ
Electrical specifications VNQ5E050MK-E
8/36 Doc ID 16374 Rev 2
2.2 Thermal data
V
ESD
Electrostatic discharge
(Human Body Model: R=1.5KΩ; C=100pF)
INPUT
CURRENT SENSE
–CS_DIS
–OUTPUT
–V
CC
4000
2000
4000
5000
5000
V
V
V
V
V
V
ESD
Charge device model (CDM-AEC-Q100-011) 750 V
T
j
Junction operating temperature -40 to 150 °C
T
stg
Storage temperature -55 to 150 °C
Table 3. Absolute maximum ratings (continued)
Symbol Parameter Value Unit
Table 4. Thermal data
Symbol Parameter Max. value Unit
R
thj-case
Thermal resistance junction-case (with one channel ON) 2.8 °C/W
R
thj-amb
Thermal resistance junction-ambient See Figure 33 °C/W
VNQ5E050MK-E Electrical specifications
Doc ID 16374 Rev 2 9/36
2.3 Electrical characteristics
Values specified in this section are for 8V<V
CC
<28V, -40°C< T
j
<150°C, unless otherwise
stated.
Table 5. Power section
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
CC
Operating supply voltage 4.5 13 28 V
V
USD
Undervoltage shutdown 3.5 4.5 V
V
USDhyst
Undervoltage shutdown
hysteresis
0.5 V
R
ON
On-state resistance
(1)
1. For each channel.
I
OUT
= 2A; T
j
= 25°C
I
OUT
= 2A; T
j
= 150°C
I
OUT
= 2A; V
CC
= 5V; T
j
= 25°C
50
100
65
mΩ
mΩ
mΩ
V
clamp
Clamp voltage I
S
= 20 mA 41 46 52 V
I
S
Supply current
Off-state; V
CC
=13V; T
j
=25°C;
V
IN
=V
OUT
=V
SENSE
=V
CSD
=0V
On-state; V
CC
=13V; V
IN
=5V;
I
OUT
=0A
2
(2)
8
2. PowerMOS leakage included.
5
(2 )
14
µA
mA
I
L(off)
Off-state output current
(1)
V
IN
=V
OUT
=0V; V
CC
=13V;
T
j
=25°C
V
IN
=V
OUT
=0V; V
CC
=13V;
T
j
=125°C
0
0
0.01 3
5
µA
V
F
Output - V
CC
diode
voltage
(1)
-I
OUT
=2A; T
j
=150°C 0.7 V
Table 6. Switching (V
CC
=13V; T
j
= 25°C)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time R
L
= 6.5Ω (see Figure 5)20µs
t
d(off)
Turn-off delay time R
L
= 6.5Ω (see Figure 5)35µs
(dV
OUT
/dt)
on
Turn-on voltage slope R
L
= 6.5Ω
See
Figure 23
V/µs
(dV
OUT
/dt)
off
Turn-off voltage slope R
L
= 6.5Ω
See
Figure 25
V/µs
W
ON
Switching energy
losses during
t
won
R
L
= 6.5Ω (see Figure 5)0.15mJ
W
OFF
Switching energy
losses during
t
woff
R
L
= 6.5Ω (see Figure 5)0.25mJ

VNQ5E050MKTR-E

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Gate Drivers QUAD CH HI-SIDE DRVR W/ANALOG CRRNT SNSE
Lifecycle:
New from this manufacturer.
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