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NTMS7N03R2

P1-P3P4-P6P7-P9
Publication Order Number:
NTMS7N03R2/D
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 5
1
NTMS7N03R2G
Power MOSFET
7 Amps, 30 Volts, N−Channel SOIC−8
Features
• Ultra Low R
DS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature SOIC−8 Surface Mount Package
• Avalanche Energy Specified
• I
DSS
Specified at Elevated Temperature
• This is a Pb−Free Device
Typical Applications
• DC−DC Converters
• Power Management
• Motor Controls
• Inductive Loads
• Replaces MMSF7N03HD, MMSF7N03Z, and MMSF5N03HD
in Many Applications
N−C
1
2
3
4
8
7
6
5
Top View
Source
Source
Gate
Drain
Drain
Drain
Drain
7 AMPERES
30 VOLTS
R
DS(on)
= 23 mW
SOIC−8
CASE 751
STYLE 13
N−Channel
MARKING
DIAGRAM
D
S
G
PIN ASSIGNMENT
www.
onsemi.com
E7N03
AYWWG
G
1
8
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
1
8
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)
NTMS7N03R2G
www.onsemi.com
2
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 Vdc
Drain−to−Gate Voltage (R
GS
= 1.0 MW)
V
DGR
30 Vdc
Gate−to−Source Voltage − Continuous V
GS
± 20 Vdc
Thermal Resistance, Junction−to−Ambient (Note 1)
R
q
JA
50 °C/W
Total Power Dissipation @ T
A
= 25°C P
D
2.5 W
Drain Current − Continuous @ T
A
= 25°C
Drain Current − Continuous @ T
A
= 70°C
Drain Current − Pulsed (Note 4)
I
D
I
D
I
DM
8.5
6.8
25
Adc
Apk
Thermal Resistance, Junction−to−Ambient (Note 2)
R
q
JA
85 °C/W
Total Power Dissipation @ T
A
= 25°C P
D
1.47 W
Drain Current − Continuous @ T
A
= 25°C
Drain Current − Continuous @ T
A
= 70°C
Drain Current − Pulsed (Note 4)
I
D
I
D
I
DM
6.5
5.2
18
Adc
Apk
Thermal Resistance, Junction−to−Ambient (Note 3)
R
q
JA
156 °C/W
Total Power Dissipation @ T
A
= 25°C P
D
0.8 W
Drain Current − Continuous @ T
A
= 25°C
Drain Current − Continuous @ T
A
= 70°C
Drain Current − Pulsed (Note 4)
I
D
I
D
I
DM
4.8
3.8
14
Adc
Apk
Operating and Storage Temperature Range T
J
, T
stg
− 55 to +150 °C
Single Pulse Drain−to−Source Avalanche Energy − Starting T
J
= 25°C
(V
DD
= 30 Vdc, V
GS
= 10 Vdc, Peak
I
L
= 12 Apk, L = 4.0 mH, R
G
= 25 W)
E
AS
288 mJ
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. 2 in. Sq. FR−4 PCB mounting, (2 oz. Cu 0.06 in. thick single sided), 10 Sec. Max.
2. 2 in. Sq. FR−4 PCB mounting, (2 oz. Cu 0.06 in. thick single sided), t = steady state.
3. Minimum FR4 or G10 PCB, t = steady state.
4. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2%.
ATTRIBUTES
Characteristics Value
ESD Protection Human Body Model
Machine Model
Charged Device Model
Class 1E
Class A
Class 0
ORDERING INFORMATION
Device Package Shipping
†
NTMS7N03R2G SOIC−8
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTMS7N03R2G
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Notes 5 and 7)
(V
GS
= 0 Vdc, I
D
= 0.25 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
30
−
−
41
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 30 Vdc, V
GS
= 0 Vdc)
(V
DS
= 30 Vdc, V
GS
= 0 Vdc, T
J
= 125°C)
I
DSS
−
−
0.02
−
1.0
10
mAdc
Gate−Body Leakage Current (V
GS
= ± 20 Vdc, V
DS
= 0) I
GSS
− − 100 nAdc
ON CHARACTERISTICS
Gate Threshold Voltage (Note 5)
(V
DS
= V
GS
, I
D
= 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
−
1.6
4.0
3.0
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Notes 5 and 7)
(V
GS
= 10 Vdc, I
D
= 7.0 Adc)
(V
GS
= 4.5 Vdc, I
D
= 3.5 Adc)
R
DS(on)
−
−
18.6
23.5
23
28
mW
Drain−to−Source On−Voltage (V
GS
= 10 Vdc, I
D
= 5.0 Adc) (Notes 5 and 7) V
DS(on)
− 93 115 mV
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 2.0 Adc) (Note 5) g
FS
3.0 13 − Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 1064 1190 pF
Output Capacitance C
oss
− 300 490
Transfer Capacitance C
rss
− 94 120
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
(V
DD
= 10 Vdc, I
D
= 5.0 Adc,
V
GS
= 4.5 Vdc,
R
G
= 9.1 W) (Note 5)
t
d(on)
− 15 30
ns
Rise Time t
r
− 71 185
Turn−Off Delay Time t
d(off)
− 27 70
Fall Time t
f
− 38 80
Turn−On Delay Time
(V
DD
= 10 Vdc, I
D
= 5.0 Adc,
V
GS
= 10 Vdc,
R
G
= 9.1 W) (Note 5)
t
d(on)
− 8.0 −
Rise Time t
r
− 38 −
Turn−Off Delay Time t
d(off)
− 33 −
Fall Time t
f
− 49
Gate Charge
(V
DS
= 16 Vdc, I
D
= 5.0 Adc,
V
GS
= 10 Vdc) (Note 5)
Q
T
− 26 43
nC
Q
1
− 3.1 −
Q
2
− 6.0 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 5) (I
S
= 7.0 Adc, V
GS
= 0 Vdc) (Note 5)
(I
S
= 7.0 Adc, V
GS
= 0 Vdc,
T
J
= 125°C)
V
SD
−
−
0.82
0.67
1.1
−
Vdc
Reverse Recovery Time
(I
S
= 7.0 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 5)
t
rr
− 27 −
ns
t
a
− 15 −
t
b
− 11.5 −
Reverse Recovery Stored Charge Q
RR
− 0.02 −
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperature.
7. Reflects Typical Values.
Cpk +
Ť
Max limit * Typ
3 S
Ť
P1-P3P4-P6P7-P9

NTMS7N03R2

Mfr. #:
Buy NTMS7N03R2
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 30V 4.8A 8-SOIC
Lifecycle:
New from this manufacturer.
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