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FDMF3035

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22
FDMF3035
www.onsemi.com
4
ABSOLUTE MAXIMUM RATINGS (T
A
= T
J
= 25°C)
Symbol
Parameter Min. Max. Unit
V
CC
Supply Voltage Referenced to AGND −0.3 7.0 V
PV
CC
Drive Voltage Referenced to AGND −0.3 7.0 V
V
PWM
PWM Signal Input Referenced to AGND −0.3
V
CC
+ 0.3
V
V
FCCM
Skip Mode Input Referenced to AGND −0.3
V
CC
+ 0.3
V
V
GL
Low Gate Manufacturing
Test Pin
Referenced to PGND (DC) GND − 0.3
V
CC
+ 0.3
V
Referenced to AGND (AC < 20 ns, 10 mJ)
GND − 0.3
V
CC
+ 0.3
V
IN
Power Input Referenced to PGND −0.3 30.0 V
V
PHASE
V
SW
PHASE and SW
Referenced to PGND (DC) −0.3 30.0
V
Referenced to PGND (AC < 5ns) −8.0 37.0
V
BOOT
Bootstrap Supply Referenced to AGND (DC) −0.3 33.0 V
VBOOT−PHASE
Boot to PHASE Voltage
Boot to PHASE Voltage
DC −0.3 7.0 V
AC < 20 ns, 10 mJ
−0.3 9.0 V
I
O(AV)
(Note 2)
Output Current
f
SW
= 300 kHz, V
IN
= 12 V, V
OUT
= 1 V 50
A
f
SW
= 1000 kHz, V
IN
= 12 V, V
OUT
= 1 V 45
qJ−A
Junction−to−Ambient Thermal Resistance 12.4 °C/W
qJ−PCB
Junction−to−PCB Thermal Resistance
(under ON Semiconductor SPS Thermal Board)
1.8 °C/W
T
A
Ambient Temperature Range −40 +125 °C
T
J
Maximum Junction Temperature +150 °C
T
STG
Storage Temperature Range −55 +150 °C
ESD
Electrostatic Discharge
Protection
Human Body Model, JESD22−A114 1.5
kV
Charged Device Model, JESD22−C101 2.5
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. I
O(AV)
is rated with testing ON Semiconductor’s SPS evaluation board at T
A
= 25°C with natural convection cooling. This rating is limited by
the peak SPS temperature, T
J
= 150°C, and varies depending on operating conditions and PCB layout. This rating may be changed with
different application settings.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min. Typ. Max. Unit
V
CC
Control Circuit Supply Voltage 4.5 5.0 5.5 V
PV
CC
Gate Drive Circuit Supply Voltage 4.5 5.0 5.5 V
V
IN
Output Stage Supply Voltage
4.5 (Note 3)
12.0 24.0 (Note 4) V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
3. 3.0 V V
IN
is possible according to the application condition.
4. Operating at high V
IN
can create excessive AC voltage overshoots on the SW−to−GND and BOOT−to−GND nodes during MOSFET
switching transient. For reliable SPS operation, SW to GND and BOOT to GND must remain at or below the Absolute Maximum Ratings
in the table above.
FDMF3035
www.onsemi.com
5
ELECTRICAL CHARACTERISTICS
(Typical value is under V
IN
= 12 V, V
CC
= PV
CC
= 5 V and T
A
= T
J
= + 25°C unless otherwise noted. Minimum / Maximum
values are under V
IN
= 12 V, V
CC
= PV
CC
= 5 V + 10% and T
J
= T
A
= −40 ~ 125°C unless otherwise noted)
Symbol
Parameter Condition Min. Typ. Max. Unit
BASIC OPERATION
I
CC_SD Quiescent Current with PWM and
FCCM Pin Floating (PS4 Mode)
I
CC
= I
VCC
+ I
PVCC
, PWM = Floating,
FCCM = Floating (Non−Switching)
6 11
mA
ICC_HIGH Quiescent Current with PWM Pin
Floating and V
FCCM
= 5 V
I
CC
= I
VCC
+ I
PVCC
, PWM = Floating,
FCCM = 5 V
80
mA
ICC_LOW Quiescent Current with PWM Pin
Floating and V
FCCM
= 0 V
I
CC
= I
VCC
+ I
PVCC
, PWM = Floating,
FCCM = 0V
120
mA
VUVLO_RISE UVLO Rising Threshold V
CC
Rising 3.4 3.9 V
VUVLO_FALL UVLO Falling Threshold V
CC
Falling 2.5 3.0 V
tD_POR POR Delay to Enable IC V
CC
UVLO Rising to Internal PWM
Enable
15
ms
FCCM INPUT
I
FCCM_HIGH Pull−Up Current V
FCCM
= 5 V 50
mA
I
FCCM_LOW
Pull−Down Current V
FCCM
= 0 V −50
mA
V
IH_FCCM
FCCM High Level Input Voltage V
CC
= PV
CC
= 5 V 3.8 V
V
TRI_FCCM
FCCM 3−State Window V
CC
= PV
CC
= 5 V 2.2 2.8 V
V
IL_FCCM
FCCM Low Level Input Voltage V
CC
= PV
CC
= 5 V 1.0 V
t
PS_EXIT
PS4 Exit Latency V
CC
= PV
CC
= 5 V 15
ms
PWM INPUT
I
PWM_HIGH
Pull−Up Current V
FCCM
= 5 V 250
mA
I
PWM_LOW
Pull−Down Current V
FCCM
= 0 V −250
mA
V
IH_PWM
PWM High Level Input Voltage V
CC
= PV
CC
= 5 V 4.1 V
V
TRI_PWM
PWM 3−State Window V
CC
= PV
CC
= 5 V 1.6 3.4 V
V
IL_PWM
PWM Low Level Input Voltage V
CC
= PV
CC
= 5 V 0.7 V
tD_HOLD−OFF 3−State Shut−off Time V
CC
= PV
CC
= 5 V, T
J
= 25°C 100 175 250 ns
PWM PROPAGATION DELAYS & DEAD TIMES (V
IN
= 12 V, V
CC
= PV
CC
= 5 V, F
SW
= 1 MHz, I
OUT
= 20 A, T
A
= 255C)
t
PD_PHGLL
PWM HIGH Propagation Delay PWM Going HIGH to GL Going LOW,
V
IH_PWM
to 90% GL
25 ns
t
PD_PLGHL
PWM LOW Propagation Delay PWM Going LOW to GH (Note 5)
Going LOW, V
IL_PWM
to 90% GH
15 ns
t
PD_PHGHH
PWM HIGH Propagation Delay
(FCCM Held LOW)
PWM Going HIGH to GH Going
HIGH, V
IH_PWM
to 10% GH
(FCCM = LOW, I
L
= 0, Assumes DCM)
15 ns
t
PD_TSGHH
Exiting 3−State Propagation Delay PWM (from 3−State) Going HIGH to
GH Going HIGH, V
IH_PWM
to 10% GH
35 ns
t
PD_TSGLH
Exiting 3−State Propagation Delay PWM (from 3−State) Going LOW to GL
Going HIGH, V
IL_PWM
to 10% GL
35 ns
t
D_DEADON
LS Off to HS On Adaptive Dead Time SW ≤ −0.2 V with GH ≤ 10%,
PWM Transition LOW to HIGH
25 ns
t
D_DEADOFF
HS Off to LS On Adaptive Dead Time SW ≤ −0.2 V with GL ≤ 10%, PWM
Transition HIGH to LOW
20 ns
FDMF3035
www.onsemi.com
6
ELECTRICAL CHARACTERISTICS
(Typical value is under V
IN
= 12 V, V
CC
= PV
CC
= 5 V and T
A
= T
J
= + 25°C unless otherwise noted. Minimum / Maximum
values are under V
IN
= 12 V, V
CC
= PV
CC
= 5 V + 10% and T
J
= T
A
= −40 ~ 125°C unless otherwise noted)
Symbol UnitMax.Typ.Min.ConditionParameter
HIGH−SIDE DRIVER (HDRV, V
CC
= PV
CC
= 5 V)
R
SOURCE_GH Output Impedance, Sourcing Source Current = 100 mA 1.0 2.5
W
ISOURCE_GH Output Sourcing Peak Current GH = 2.5 V 2 A
R
SINK_GH
Output Impedance, Sinking Sink Current = 100 mA 1.0 2.5
W
I
SINK_GH
Output Sinking Peak Current GH = 2.5 V 4 A
t
R_GH
GH Rise Time GH = 10% to 90%, C
LOAD
= 3.0 nF 8 ns
t
F_GH
GH Fall Time GH = 90% to 10%, C
LOAD
= 3.0 nF 8 ns
LOW−SIDE DRIVER (LDRV, V
CC
= PV
CC
= 5 V)
R
SOURCE_GL Output Impedance, Sourcing Source Current = 100 mA 1.0 2.5
W
ISOURCE_GL
Output Sourcing Peak Current GL = 2.5 V 2 A
R
SINK_GL
Output Impedance, Sinking Sink Current = 100 mA 0.5
W
I
SINK_GL
Output Sinking Peak Current GL = 2.5 V 4 A
t
R_GL
GL Rise Time GL = 10% to 90%, C
LOAD
= 3.0 nF 8 ns
t
F_GL
GL Fall Time GL = 90% to 10%, C
LOAD
= 3.0 nF 4 ns
BOOT DIODE
V
F
Forward−Voltage Drop I
F
= 10 mA 0.6 V
V
R
Breakdown Voltage I
R
= 1 mA 30 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. GH = Gate High, internal gate pin of the high−side MOSFET.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22

FDMF3035

Mfr. #:
Buy FDMF3035
Manufacturer:
ON Semiconductor / Fairchild
Description:
Gate Drivers SMART POWER STAGE MODULE
Lifecycle:
New from this manufacturer.
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