BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.5.3_00
S-8261 Series
Seiko Instruments Inc.
13
(7) S-8261ACD
Table 14
Item Symbol Condition Min. Typ. Max. Unit
Test
Condition
Test
Circuit
DELAY TIME (Ta = 25°C)
Overcharge detection delay time t
CU
0.96 1.2 1.4 s 9 5
Overdischarge detection delay time t
DL
232 290 348 ms 9 5
Overcurrent 1 detection delay time t
lOV1
14 18 22 ms 10 5
Overcurrent 2 detection delay time t
lOV2
1.8 2.24 2.7 ms 10 5
Load short-circuiting detection delay time t
SHORT
220 320 380
μ
s 10 5
DELAY TIME (Ta =
40°C to
+
85°C)
*1
Overcharge detection delay time t
CU
0.7 1.2 2.0 s 9 5
Overdischarge detection delay time t
DL
160 290 493 ms 9 5
Overcurrent 1 detection delay time t
lOV1
10 18 31 ms 10 5
Overcurrent 2 detection delay time t
lOV2
1.2 2.24 3.8 ms 10 5
Load short-circuiting detection delay time t
SHORT
150 320 540
μ
s 10 5
*1.
Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design,
not tested in production.
(8) S-8261ACF
Table 15
Item Symbol Condition Min. Typ. Max. Unit
Test
Condition
Test
Circuit
DELAY TIME (Ta = 25°C)
Overcharge detection delay time t
CU
0.96 1.2 1.4 s 9 5
Overdischarge detection delay time t
DL
115 144 173 ms 9 5
Overcurrent 1 detection delay time t
lOV1
14 18 22 ms 10 5
Overcurrent 2 detection delay time t
lOV2
1.8 2.24 2.7 ms 10 5
Load short-circuiting detection delay time t
SHORT
220 320 380
μ
s 10 5
DELAY TIME (Ta =
40°C to
+
85°C)
*1
Overcharge detection delay time t
CU
0.7 1.2 2.0 s 9 5
Overdischarge detection delay time t
DL
80 144 245 ms 9 5
Overcurrent 1 detection delay time t
lOV1
10 18 31 ms 10 5
Overcurrent 2 detection delay time t
lOV2
1.2 2.24 3.8 ms 10 5
Load short-circuiting detection delay time t
SHORT
150 320 540
μ
s 10 5
*1.
Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design,
not tested in production.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
Rev.5.3_00
Seiko Instruments Inc.
14
(9) S-8261ACH
Table 16
Item Symbol Condition Min. Typ. Max. Unit
Test
Condition
Test
Circuit
DELAY TIME (Ta = 25°C)
Overcharge detection delay time t
CU
0.24 0.3 0.36 s 9 5
Overdischarge detection delay time t
DL
29 36 43 ms 9 5
Overcurrent 1 detection delay time t
lOV1
7.2 9 11 ms 10 5
Overcurrent 2 detection delay time t
lOV2
0.89 1.12 1.35 ms 10 5
Load short-circuiting detection delay time t
SHORT
220 320 380
μ
s 10 5
DELAY TIME (Ta =
40°C to
+
85°C)
*1
Overcharge detection delay time t
CU
0.17 0.3 0.51 s 9 5
Overdischarge detection delay time t
DL
20 36 61 ms 9 5
Overcurrent 1 detection delay time t
lOV1
5 9 15 ms 10 5
Overcurrent 2 detection delay time t
lOV2
0.61 1.12 1.91 ms 10 5
Load short-circuiting detection delay time t
SHORT
150 320 540
μ
s 10 5
*1.
Since products are not screened at high and low temperatures, the specification for this temperature range is guaranteed by design,
not tested in production.
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.5.3_00
S-8261 Series
Seiko Instruments Inc.
15
Test Circuits
Caution Unless otherwise specified, the output voltage levels “H” and “L” at CO pin (V
CO
) and DO pin (V
DO
) are
judged by the threshold voltage (1.0 V) of the N-channel FET. Judge the CO pin level with respect to
V
VM
and the DO pin level with respect to V
SS
.
(1) Test Condition 1, Test Circuit 1
(Overcharge Detection Voltage, Overcharge Hysteresis Voltage)
The overcharge detection voltage (V
CU
) is defined as the voltage between VDD and VSS at which V
CO
goes from “H”
to “L” when the voltage V1 is gradually increased from the starting condition of V1
= 3.5 V. The overcharge
hysteresis voltage (V
HC
) is then defined as the difference between the overcharge detection voltage (V
CU
) and the
voltage between VDD and VSS at which V
CO
goes from “L” to “H” when the voltage V1 is gradually decreased.
(2) Test Condition 2, Test Circuit 2
(Overdischarge Detection Voltage, Overdischarge Hysteresis Voltage)
The overdischarge detection voltage (V
DL
) is defined as the voltage between VDD and VSS at which V
DO
goes from
“H” to “L” when the voltage V1 is gradually decreased from the starting condition of V1
= 3.5 V and V2 = 0 V. The
overdischarge hysteresis voltage (V
HD
) is then defined as the difference between the overdischarge detection
voltage (V
DL
) and the voltage between VDD and VSS at which V
DO
goes from “L” to “H” when the voltage V1 is
gradually increased.
(3) Test Condition 3, Test Circuit 2
(Overcurrent 1 Detection Voltage, Overcurrent 2 Detection Voltage, Load Short-Circuiting Detection Voltage)
The overcurrent 1 detection voltage (V
IOV1
) is defined as the voltage between VM and VSS whose delay time for
changing V
DO
from “H” to “L” lies between the minimum and the maximum value of the overcurrent 1 detection delay
time when the voltage V2 is increased rapidly (within 10
μs) from the starting condition V1 = 3.5 V and V2 = 0 V.
The overcurrent 2 detection voltage (V
IOV2
) is defined as the voltage between VM and VSS whose delay time for
changing V
DO
from “H” to “L” lies between the minimum and the maximum value of the overcurrent 2 detection delay
time when the voltage V2 is increased rapidly (within 10
μs) from the starting condition V1 = 3.5 V and V2 = 0 V.
The load short-circuiting detection voltage (V
SHORT
) is defined as the voltage between VM and VSS whose delay time
for changing V
DO
from “H” to “L” lies between the minimum and the maximum value of the load short-circuiting
detection delay time when the voltage V2 is increased rapidly (within 10
μs) from the starting condition V1 = 3.5 V
and V2
= 0 V.
(4) Test Condition 4, Test Circuit 2
(Charger Detection Voltage, Abnormal Charge Current Detection Voltage)
The charger detection voltage (V
CHA
) is defined as the voltage between VM and VSS at which V
DO
goes from “L” to
“H” when the voltage V2 is gradually decreased from 0 V after the voltage V1 is gradually increased from the starting
condition of V1
= 1.8 V and V2 = 0 V until the voltage V1 becomes V1 = V
DL
+ (V
HD
/ 2).
The charger detection voltage can be measured only in the product whose overdischarge hysteresis V
HD
0.
Set V1
= 3.5 V and V2 = 0 V. Decrease V2 from 0 V gradually. The voltage between VM and VSS when V
CO
goes
from “H” to “L” is the abnormal charge current detection voltage. The abnormal charge current detection voltage has
the same value as the charger detection voltage (V
CHA
).
(5) Test Condition 5, Test Circuit 2
(Normal Operation Current Consumption, Power-Down Current Consumption, Overdischarge Current Consumption)
With power-down function
The operating current consumption (I
OPE
) is the current that flows through the VDD pin (I
DD
) under the set conditions
of V1
= 3.5 V and V2 = 0 V (Normal status).
The power-down current consumption (I
PDN
) is the current that flows through the VDD pin (I
DD
) under the set
conditions of V1
= V2 = 1.5 V (Overdischarge status).
Without power-down function
The operating current consumption (I
OPE
) is the current that flows through the VDD pin (I
DD
) under the set conditions
of V1
= 3.5 V and V2 = 0 V (Normal status).
The Overdischarge
current consumption (I
OPED
) is the current that flows through the VDD pin (I
DD
) under the set
conditions of V1
= V2 = 1.5 V (Overdischarge status).

S-8261ABJMD-G3JT2G

Mfr. #:
Manufacturer:
ABLIC
Description:
Battery Management Lithium-Ion battery protection (1 cell)
Lifecycle:
New from this manufacturer.
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