1996 May 09 3
Philips Semiconductors Product specification
UHF power transistor BLT81
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 20 V
V
CEO
collector-emitter voltage open base − 9.5 V
V
EBO
emitter-base voltage open collector − 2.5 V
I
C
collector current (DC) − 500 mA
I
C(AV)
average collector current − 500 mA
P
tot
total power dissipation T
s
=110°C; note 1 − 2W
T
stg
storage temperature −65 +150 °C
T
j
operating junction temperature − 175 °C
Fig.2 DC SOAR.
T
s
= 110 °C.
handbook, halfpage
MRC094
10
−1
10
2
1
110
I
C
(A)
V
CE
(V)
THERMAL CHARACTERISTICS
Note to the “Limiting values” and “Thermal characteristics”
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point P
tot
=2W; T
s
=110°C; note 1 32 K/W
