1996 May 09 4
Philips Semiconductors Product specification
UHF power transistor BLT81
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
Note
1. Measured under pulsed conditions: t
p
≤ 200 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
collector-base breakdown voltage open emitter; I
C
= 1 mA 20 −−V
V
(BR)CEO
collector-emitter breakdown voltage open base; I
C
= 10 mA 9.5 −−V
V
(BR)EBO
emitter-base breakdown voltage open collector; I
E
= 0.1 mA 2.5 −−V
I
CES
collector leakage current V
CE
= 10 V; V
BE
=0 −−0.1 mA
h
FE
DC current gain V
CE
=5V; I
C
= 300 mA; note 1; 25 −−
C
c
collector capacitance V
CB
= 7.5 V; I
E
=i
e
= 0; f = 1 MHz; − 2.7 4 pF
C
re
feedback capacitance V
CE
= 7.5 V; I
C
= 0; f = 1 MHz − 1.7 3 pF
Fig.3 DC current gain as a function of collector
current; typical values.
V
CE
= 7.5 V; t
p
≤ 200 µs; δ≤0.02; T
j
=25°C.
handbook, halfpage
MRC090
0
20
40
60
80
100
0 100 200 300 400
I
C
(mA)
h
FE
Fig.4 Collector capacitance as a function of
collector-base voltage; typical values.
I
E
=i
e
= 0; f = 1 MHz; T
j
=25°C.
handbook, halfpage
MRC086
0
2
4
6
0246810
C
c
(pF)
V
CB
(V)
