1996 May 09 7
Philips Semiconductors Product specification
UHF power transistor BLT81
List of components used in test circuit (see Figs 7 and 8)
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (ε
r
= 2.2); thickness
1
16
"; thickness of the copper sheet 35 µm.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.
C1, C14 multilayer ceramic chip capacitor; note 1 100 pF
C2 multilayer ceramic chip capacitor; note 1 3 pF
C3, C5, C11, C13 film dielectric trimmer 1.4 to 5.5 pF 2222 809 09004
C4 multilayer ceramic chip capacitor; note 1 5.6 pF
C6, C7, C10 multilayer ceramic chip capacitor; note 1 5.1 pF
C8 multilayer ceramic chip capacitor; note 1 3.6 pF
C9 multilayer ceramic chip capacitor; note 1 220 pF
C12 multilayer ceramic chip capacitor; 1 nF
L1 stripline; note 2 50 length 26.6 mm
width 4.85 mm
L2 10 turns enamelled 0.6 mm copper wire 250 nH int. dia. 4.5 mm
leads 2 × 5mm
L3, L9 grade 3B Ferroxcube wideband
HF choke
4312 020 36640
L4 stripline; note 2 50 length 18 mm
width 4.85 mm
L5 stripline; note 2 75 length 3.5 mm
width 2.5 mm
L6 stripline; note 2 50 length 10 mm
width 4.85 mm
L7 4 turns enamelled 0.6 mm copper wire 65 nH int. dia. 4.5 mm
leads 2 × 5mm
L8 stripline; note 2 50 length 15 mm
width 4.85 mm
L10 stripline; note 2 50 length 24.6 mm
width 4.85 mm
R1, R2 metal film resistor 10 , 0.25 W
1996 May 09 8
Philips Semiconductors Product specification
UHF power transistor BLT81
Fig.8 Printed-circuit board and component lay-out for 900 MHz class-B test circuit in Fig.7.
Dimensions in mm.
The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by means of fixing screws and copper foil straps under the emitter leads.
handbook, full pagewidth
strap
strap
strap
strap
rivets
(14x)
mounting
screws
(8x)
140
80
MEA898
L9
C12
R2
L7
L6
C9
R1
L3
V
CC
C1
C10
C14L10L8
C8
C11 C13
C7
C6
L5
L4
C5
C3
L1
C2
L2
C4
1996 May 09 9
Philips Semiconductors Product specification
UHF power transistor BLT81
Fig.9 Input impedance as a function of frequency
(series components); typical values.
Class-B; V
CE
= 7.5 V; P
L
= 1.2 W; T
s
60 °C.
handbook, halfpage
MRC091
0
2
4
6
8
10
800 840 880 920 960 1000
f (MHz)
Z
i
()
r
i
x
i
Fig.10 Load impedance as a function of frequency
(series components); typical values.
Class-B; V
CE
= 7.5 V; P
L
= 1.2 W; T
s
60 °C.
handbook, halfpage
MRC092
0
4
8
12
16
20
800 840 880 920 960 1000
f (MHz)
X
L
R
L
Z
L
()
Fig.11 Power gain as a function of
frequency; typical values.
Class-B; V
CE
= 7.5 V; P
L
= 1.2 W; T
s
60 °C.
handbook, halfpage
MRC089
0
2
4
6
8
10
800 840 880 920 960 1000
f (MHz)
G
p
(dB)
Fig.12 Definition of transistor impedance.
handbook, halfpage
MBA451
Z
i
Z
L

BLT81,115

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors NPN 6-7.5V 500mA UHF
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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