GTL2008_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 19 February 2010 7 of 22
NXP Semiconductors
GTL2008
GTL translator with power good control and high-impedance outputs
8. Application design-in information
(1) If 9AO needs to be HIGH before EN2 goes HIGH, a pull-up resistor is required because it is high-impedance until EN2 goes
HIGH. All other outputs, both GTL and LVTTL, require pull-up resistors because they are open-drain.
Fig 3. Typical application
THRMTRIP L
CPU1
IERR_L
FORCEPR_L
CPU2 DISABLE_L
GTL2008
PROCHOT L
FORCEPR_L
PROCHOT L
THRMTRIP L
IERR_L
CPU1 DISABLE_L
CPU2
NMI
NMI
10BO2
10BO1
4BI
3BI
6BI
5BI
EN2
7BO2
7BO1
2BI
1BI
1AO
2AO
5A
6A
11A
3AO
4AO
10AI1
10AI2
EN1
GND
9BI
9AO
PLATFORM
HEALTH
MANAGEMENT
CPU1 1ERR_L
CPU1 THRMTRIP L
CPU1 PROCHOT L
CPU2 PROCHOT L
NMI_L
CPU2 1ERR_L
CPU2 THRMTRIP L
CPU1 SMI L
CPU2 SMI L
SMI_BUFF_L
SOUTHBRIDGE NMI
SOUTHBRIDGE SMI_L
power supply
POWER GOOD
1.5 kΩ to 1.2 kΩ
V
CC
V
TT
56 Ω
1.5 kΩ
R
2R
VREF
11B1
V
CC
V
CC
11B0
002aab970
56 Ω
V
TT
(1)
GTL2008_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 19 February 2010 8 of 22
NXP Semiconductors
GTL2008
GTL translator with power good control and high-impedance outputs
9. Limiting values
[1] The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
[2] Current into any output in the LOW state.
[3] Current into any output in the HIGH state.
[4] The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150 °C.
10. Recommended operating conditions
Table 10. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 0.5 +4.6 V
I
IK
input clamping current V
I
<0V - 50 mA
V
I
input voltage A port (LVTTL) 0.5
[1]
+4.6 V
B port (GTL) 0.5
[1]
+4.6 V
I
OK
output clamping current V
O
<0V - 50 mA
V
O
output voltage output in OFF or HIGH state; A port 0.5
[1]
+4.6 V
output in OFF or HIGH state; B port 0.5
[1]
+4.6 V
I
OL
LOW-level output current
[2]
A port - 32 mA
B port - 30 mA
I
OH
HIGH-level output current
[3]
A port - 32 mA
T
stg
storage temperature 60 +150 °C
T
j(max)
maximum junction temperature
[4]
-+125°C
Table 11. Operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 3.0 3.3 3.6 V
V
TT
termination voltage GTL - 1.2 - V
V
ref
reference voltage GTL 0.64 0.8 1.1 V
V
I
input voltage A port 0 3.3 3.6 V
B port 0 V
TT
3.6 V
V
IH
HIGH-level input voltage A port and ENn 2 - - V
B port V
ref
+0.050 - - V
V
IL
LOW-level input voltage A port and ENn - - 0.8 V
B port - - V
ref
0.050 V
I
OH
HIGH-level output current A port - - 16 mA
I
OL
LOW-level output current A port - - 16 mA
B port - - 15 mA
T
amb
ambient temperature operating in free-air 40 - +85 °C
GTL2008_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 19 February 2010 9 of 22
NXP Semiconductors
GTL2008
GTL translator with power good control and high-impedance outputs
11. Static characteristics
[1] All typical values are measured at V
CC
= 3.3 V and T
amb
=25°C.
[2] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[3] This is the increase in supply current for each input that is at the specified LVTTL voltage level rather than V
CC
or GND.
Table 12. Static characteristics
Recommended operating conditions; voltages are referenced to GND (ground = 0 V). T
amb
=
40
°
Cto +85
°
C
Symbol Parameter Conditions Min Typ
[1]
Max Unit
V
OH
HIGH-level output
voltage
9AO; V
CC
= 3.0 V to 3.6 V; I
OH
= 100 μA
[2]
V
CC
0.2 3.0 - V
9AO; V
CC
=3.0V; I
OH
= 16 mA
[2]
2.1 2.3 - V
V
OL
LOW-level output
voltage
A port; V
CC
= 3.0 V; I
OL
=4mA
[2]
-0.150.4V
A port; V
CC
= 3.0 V; I
OL
=8mA
[2]
- 0.3 0.55 V
A port; V
CC
= 3.0 V; I
OL
=16mA
[2]
-0.60.8V
B port; V
CC
= 3.0 V; I
OL
=15mA
[2]
-0.130.4V
I
OH
HIGH-level output
current
open-drain outputs; A port other than 9AO;
V
O
=V
CC
; V
CC
=3.6V
--±1 μA
I
I
input current A port; V
CC
= 3.6 V; V
I
=V
CC
--±1 μA
A port; V
CC
= 3.6 V; V
I
=0V - - ±1 μA
B port; V
CC
= 3.6 V; V
I
=V
TT
or GND - - ±1 μA
I
CC
supply current A or B port; V
CC
=3.6V; V
I
=V
CC
or GND;
I
O
=0mA
-812mA
ΔI
CC
[3]
additional supply
current
per input; A port or control inputs;
V
CC
=3.6V; V
I
=V
CC
0.6 V
- - 500 μA
C
io
input/output
capacitance
A port; V
O
=3.0Vor0V - 2.5 3.5 pF
B port; V
O
=V
TT
or 0 V - 1.5 2.5 pF

GTL2008PW,112

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
IC TRNSLTR UNIDIR 28TSSOP
Lifecycle:
New from this manufacturer.
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