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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RT1A045AP
*1 Limited only by maximum temperature allowed.
*2 Pw 10s, Duty cycle 1%
*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Mounted on a FR4(20×20×0.8mm)
*5 Pulsed
Thermal resistance
Parameter Symbol
Values
Unit
Min. Typ. Max.
Thermal resistance, junction - ambient
R
thJA
*4
- - 192 °C/W
Thermal resistance, junction - ambient
R
thJA
*3
- - 100 °C/W
Electrical characteristics(T
a
= 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
V
Breakdown voltage
temperature coefficient
ΔV
(BR)DSS
ΔT
j
I
D
= 1mA
referenced to 25°C
-
12
-
mV/C
Drain - Source breakdown
voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
12
--
A
Gate - Source leakage current
I
GSS
V
GS
= 8V, V
DS
= 0V
--
10 A
Zero gate voltage drain current
I
DSS
V
DS
= 12V, V
GS
= 0V
--
10
V
Gate threshold voltage
temperature coefficient
ΔV
(GS)th
ΔT
j
I
D
= 1mA
referenced to 25°C
-2.6-
mV/C
Gate threshold voltage
V
GS (th)
V
DS
= 6V, I
D
= 1mA
0.3
-
1.0
38 57
V
GS
= 1.5V, I
D
=0.9A
Static drain - source
on - state resistance
R
DS(on)
*5
V
GS
= 4.5V, I
D
=4.5A
-2230
- 50 100
V
GS
= 4.5V, I
D
= 4.5A, T
j
=125°C
Transconductance
g
fs
*5
V
DS
= 6V, I
D
= 4.5A
5.5 11 - S
-3448
Gate input resistannce
R
G
f = 1MHz, open drain - 20 -
m
V
GS
= 2.5V, I
D
= 2.2A
-2839
V
GS
= 1.8V, I
D
= 2.2A
-
2/11
2012.11 - Rev.C
