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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RT1A045AP
Electrical characteristic curves
0.1
1
10
100
1000
0.0001 0.01 1 100
T
a
=25ºC
Single Pulse
0.01
0.1
1
10
100
0.1 1 10 100
Operation in this area
is limited by R
DS
(on)
(V
GS
= 4.5V )
P
W
= 100μs
P
W
= 1ms
P
W
= 10ms
DC Operation
T
a
=25ºC
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Fig.1 Power Dissipation Derating Curve
Power Dissipation : P
D
/P
D
max. [%]
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
Drain Current : -I
D
[A]
Drain - Source Voltage : V
DS
[V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Normalized Transient Thermal Resistance : r
(t)
Pulse Width : Pw [s]
Fig.4 Single Pulse Maxmum Power dissipation
Peak Transient Power : P(W)
Pulse Width : Pw [s]
0
20
40
60
80
100
120
0 50 100 150 200
0.001
0.01
0.1
1
10
0.0001 0.01 1 100
T
a
=25ºC
Single Pulse
Rth(ch-a)=100ºC/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
Mounted on ceramic board
(30mm × 30mm × 0.8mm)
top D=1
D=0.5
D=0.1
D=0.05
D=0.01
bottom Signle
4/11
2012.11 - Rev.C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RT1A045AP
Electrical characteristic curves
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0246810
V
GS
= 1.0V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 2.5V
V
GS
= 1.2V
V
GS
= 2.0V
V
GS
= 1.8V
V
GS
= 1.5V
T
a
=25°C
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0 0.2 0.4 0.6 0.8 1
T
a
=25°C
V
GS
= 1.8V
V
GS
= 1.2V
V
GS
= 1.0V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 2.5V
V
GS
= 2.0V
V
GS
= 1.5V
Fig.5 Typical Output Characteristics(I)
Drain Current : -I
D
[A]
Drain - Source Voltage : -V
DS
[V]
Fig.6 Typical Output Characteristics(II)
Drain - Source Voltage : -V
DS
[V]
Drain Current : -I
D
[A]
5/11
2012.11 - Rev.C
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RT1A045AP
Electrical characteristic curves
0
10
20
30
-50 0 50 100 150
V
GS
=0V
I
D
= 1mA
0.001
0.01
0.1
1
10
0 0.5 1 1.5 2
V
DS
= 6V
T
a
=125°C
T
a
=75°C
T
a
=25°C
T
a
= 25°C
0
0.2
0.4
0.6
0.8
1
-50 0 50 100 150
V
DS
= 6V
I
D
= 1mA
0.1
1
10
100
0.1 1 10
V
DS
= 6V
T
a
= 25°C
T
a
=25°C
T
a
=75°C
T
a
=125°C
Fig.7 Breakdown Voltage
vs. Junction Temperature
Drain - Source Breakdown Voltage : -V
(
BR
)
DSS
[V]
Junction Temperature : T
j
[°C]
Fig.8 Typical Transfer Characteristics
Gate - Source Voltage : -V
GS
[V]
Fig.9 Gate Threshold Voltage
vs. Junction Temperature
Gate Threshold Voltage : -V
GS(th)
[V]
Junction Temperature : T
j
[°C]
Fig.10 Transconductance vs. Drain Current
Transconductance : g
fs
[S]
Drain Current : -I
D
[A]
Drain Current : -I
D
[A]
6/11
2012.11 - Rev.C

RT1A045APTCR

Mfr. #:
Manufacturer:
Description:
MOSFET 1.5V Drive Pch Si MOSFET
Lifecycle:
New from this manufacturer.
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