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RT1A045APTCR

P1-P3P4-P6P7-P9P10-P12P13-P13
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RT1A045AP
Electrical characteristic curves
0
0.2
0.4
0.6
0.8
1
1.2
-25 0 25 50 75 100 125 150
0
20
40
60
80
100
02468
I
D
= 4.5A
T
a
=25°C
I
D
= 0.9A
10
100
0.1 1 10
V
GS
= 1.5V
V
GS
= 1.8V
V
GS
= 2.5V
V
GS
= 4.5V
T
a
=25°C
0
10
20
30
40
-50-250 255075100125150
V
GS
= 4.5V
I
D
= 4.5A
Fig.11 Drain CurrentDerating Curve
Drain Current Dissipation
: I
D
/I
D
max. (%)
Junction Temperature : T
j
[ºC]
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Static Drain - Source On-State Resistance
: R
DS(on)
[m]
Junction Temperature : T
j
[ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: R
DS(on)
[m]
Drain Current : -I
D
[A]
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Static Drain - Source On-State Resistance
: R
DS(on)
[m]
Gate - Source Voltage : -V
GS
[V]
7/11
2012.11 - Rev.C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RT1A045AP
Electrical characteristic curves
10
100
0.1 1 10
V
GS
= 4.5V
T
a
=125°C
T
a
=75°C
T
a
=25°C
T
a
= 25°C
10
100
0.1 1 10
V
GS
= 2.5V
T
a
=125°C
T
a
=75°C
T
a
=25°C
T
a
= 25°C
10
100
0.1 1 10
V
GS
= 1.8V
T
a
=125°C
T
a
=75°C
T
a
=25°C
T
a
= 25°C
Fig.15 Static Drain-Source On-State
Resistance vs. Drain Current(II)
Static Drain - Source On-State Resistance
: RDS(on) [m]
Drain Current : -I
D
[A]
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(III)
Static Drain - Source On-State Resistance
: RDS(on) [m]
Drain Current : -I
D
[A]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
Static Drain - Source On-State Resistance
: RDS(on) [m]
Drain Current :-I
D
[A]
8/11
2012.11 - Rev.C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RT1A045AP
Electrical characteristic curves
100
1000
10000
0.01 0.1 1 10 100
C
oss
C
rss
T
a
=25°C
f=1MHz
V
GS
=0V
C
iss
10
100
1000
0.01 0.1 1 10 100
t
r
t
f
t
d
(
on
)
t
d
(
off
)
T
a
=25°C
V
DD
= 6V
V
GS
= 4.5V
R
G
=10
0
1
2
3
4
5
0 5 10 15 20 25 30 35 40 45 50
T
a
=25°C
V
DD
= 6V
I
D
= 4.5A
R
G
=10
0.001
0.01
0.1
1
10
00.511.5
V
GS
=0V
T
a
=125°C
T
a
=75°C
T
a
=25°C
T
a
= 25°C
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
Capacitance : C [pF]
Drain - Source Voltage : -V
DS
[V]
Fig.20 Dynamic Input Characteristics
Gate - Source Voltage : -V
GS
[V]
Total Gate Charge : Q
g
[nC]
Fig.19 Switching Characteristics
Switching Time : t [ns]
Drain Current : -I
D
[A]
Fig.21 Source Current
vs. Source Drain Voltage
Source Current : -I
S
[A]
Source-Drain Voltage : -V
SD
[V]
9/11
2012.11 - Rev.C
P1-P3P4-P6P7-P9P10-P12P13-P13

RT1A045APTCR

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MOSFET 1.5V Drive Pch Si MOSFET
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