REVISION A 5/7/15
85222-01 DATA SHEET
7 DUAL LVCMOS / LVTTL-TODIFFERENTIAL
HSTL TRANSLATOR
Zo = 50 Ohm
Ro ~ 7 Ohm
Q2
Driv er_LVCMOS
Zo = 50 Ohm
Ro ~ 7 Ohm
Q1
Driv er_LVCMOS
Zo = 50 Ohm
R2
50
Zo = 50 Ohm
U1
ICS85222-01
1
2
3
4
8
7
6
5
Q0
nQ0
Q1
nQ1
VDD
CLK0
CLK1
GND
R3
50
VDD=3.3V
LVHSTL Input
+
-
R5 43
Zo = 50 Ohm
R6 43 R4
50
VDD=3.3V
R1
50
Zo = 50 Ohm
VDD=3.3V
C1
0.1u
LVHSTL Input
+
-
SCHEMATIC EXAMPLE
Figure 2 shows a schematic example of 85222-01. In this
example, the inputs are driven by 7Ω output LVCMOS drivers
with series terminations. The decoupling capacitors should be
FIGURE 2. 85222-01 HSTL BUFFER SCHEMATIC EXAMPLE
physically located near the power pin. For 85222-01, the
unused output need to be terminated.
DUAL LVCMOS / LVTTL-TODIFFERENTIAL
HSTL TRANSLATOR
85222-01 DATA SHEET
8 REVISION A 5/7/15
POWER CONSIDERATIONS
This section provides information on power dissipation and junction temperature for the 85222-01.
Equations and example calculations are also provided.
1. Power Dissipation.
The total power dissipation for the 85222-01 is the sum of the core power plus the power dissipated in the load(s).
The following is the power dissipation for V
DD
= 3.3V + 5% = 3.465V, which gives worst case results.
NOTE: Please refer to Section 3 for details on calculating power dissipated in the load.
Power (core)
MAX
= V
DD_MAX
* I
DD_MAX
= 3.465V * 35mA = 121.3mW
Power (outputs)
MAX
= 82.34mW/Loaded Output pair
If all outputs are loaded, the total power is 2 * 82.34mW = 164.68mW
Total Power
_MAX
(3.465V, with all outputs switching) = 121.3mW + 164.68mW = 285.98mW
2. Junction Temperature.
Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad and directly affects the reliability of
the device. The maximum recommended junction temperature for the devices is 125°C.
The equation for Tj is as follows: Tj = θ
JA
* Pd_total + T
A
Tj = Junction Temperature
θ
JA
= Junction-to-Ambient Thermal Resistance
Pd_total = Total device power dissipation (example calculation is in Section 1 above)
T
A
= Ambient Temperature
In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance θ
JA
must be used. Assuming
a moderate air fl ow of 200 linear feet per minute and a multi-layer board, the appropriate value is 103.3°C/W per Table 5 below.
Therefore, Tj for an ambient temperature of 70°C with all outputs switching is:
70°C + 0.286W * 103.3°C/W = 99.5°C. This is well below the limit of 125°C.
This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air fl ow,
and the type of board (single layer or multi-layer).
θ
JA
by Velocity (Linear Feet per Minute)
0 200 500
Single-Layer PCB, JEDEC Standard Test Boards 153.3°C/W 128.5°C/W 115.5°C/W
Multi-Layer PCB, JEDEC Standard Test Boards 112.7°C/W 103.3°C/W 97.1°C/W
NOTE: Most modern PCB designs use multi-layered boards. The data in the second row pertains to most designs.
TABLE 5. THERMAL RESISTANCE θ
JA
FOR 8-PIN SOIC, FORCED CONVECTION
REVISION A 5/7/15
85222-01 DATA SHEET
9 DUAL LVCMOS / LVTTL-TODIFFERENTIAL
HSTL TRANSLATOR
3. Calculations and Equations.
The purpose of this section is to derive the power dissipated into the load.
HSTL output driver circuit and termination are shown in Figure 3.
To calculate worst case power dissipation into the load, use the following equations which assume a 50Ω load.
Pd_H is power dissipation when the output drives high.
Pd_L is the power dissipation when the output drives low.
Pd_H = (V
OH_MAX
/R
L
) * (V
DD_MAX
- V
OH_MAX
)
Pd_L = (V
OL_MAX
/R
L
) * (V
DD_MAX
- V
OL_MAX
)
Pd_H = (1.4V/50Ω) * (3.465V - 1.4V) = 57.82mW
Pd_L = (0.4V/50Ω) * (3.465V - 0.4V) = 24.52mW
Total Power Dissipation per output pair = Pd_H + Pd_L = 82.34mW
FIGURE 3. HSTL DRIVER CIRCUIT AND TERMINATION

85222AM-01LF

Mfr. #:
Manufacturer:
Description:
Translation - Voltage Levels DUAL 1 HSTL OUT BUFFER
Lifecycle:
New from this manufacturer.
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