IPB180N08S402ATMA1

P1-P3 P4-P6 P7-P9

IPB180N08S4-02

OptiMOS

™

-T2 Power-Transistor

Features

• N-channel - Enhancement mode

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

• Ultra low R

DSon

• Ultra high I

D

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

1)

I

D

T

C

=25°C, V

GS

=10V

180 A

T

C

=100°C, V

GS

=10V

2)

180

Pulsed drain current

2)

I

D,pulse

T

C

=25°C

720

Avalanche energy, single pulse

2)

E

AS

I

D

=90A

640 mJ

Avalanche current, single pulse

I

AS

-

175 A

Gate source voltage

V

GS

- ±20 V

Power dissipation

P

tot

T

C

=25°C

277 W

Operating and storage temperature

T

j

, T

stg

- -55 ... +175 °C

Value

V

DS

80

V

R

DS(on),max

2.2

mW

I

D

180 A

Product Summary

Type Package Marking

IPB180N08S4-02 PG-TO263-7-3 4N0802

PG-TO263-7-3

Rev. 1.0 page 1 2014-06-20

IPB180N08S4-02

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

2)

Thermal resistance, junction - case

R

thJC

- - - 0.54 K/W

SMD version, device on PCB

R

thJA

minimal footprint - - 62

6 cm

2

cooling area

3)

- - 40

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0V, I

D

= 1mA

80 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=220µA

2.0 3.0 4.0

Zero gate voltage drain current

I

DSS

V

DS

=80V, V

GS

=0V,

T

j

=25°C

- 0.03 1 µA

V

DS

=80V, V

GS

=0V,

T

j

=125°C

2)

- 10 200

Gate-source leakage current

I

GSS

V

GS

=20V, V

DS

=0V

- - 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=10V, I

D

=100A

- 1.8 2.2

mW

Values

Rev. 1.0 page 2 2014-06-20

IPB180N08S4-02

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

2)

Input capacitance

C

iss

- 8884 11550 pF

Output capacitance

C

oss

- 3435 4465

Reverse transfer capacitance

C

rss

- 177 354

Turn-on delay time

t

d(on)

- 30 - ns

Rise time

t

r

- 15 -

Turn-off delay time

t

d(off)

- 50 -

Fall time

t

f

- 50 -

Gate Charge Characteristics

2)

Gate to source charge

Q

gs

- 45 58 nC

Gate to drain charge

Q

gd

- 27 55

Gate charge total

Q

g

- 128 167

Gate plateau voltage

V

plateau

- 5.1 - V

Reverse Diode

Diode continous forward current

2)

I

S

- - 180 A

Diode pulse current

2)

I

S,pulse

- - 720

Diode forward voltage

V

SD

V

GS

=0V, I

F

=100A,

T

j

=25°C

- 1 1.2 V

Reverse recovery time

2)

t

rr

V

R

=40V, I

F

=50A,

di

F

/dt=100A/µs

- 80 - ns

Reverse recovery charge

2)

Q

rr

- 160 - nC

T

C

=25°C

Values

V

GS

=0V, V

DS

=25V,

f=1MHz

V

DD

=40V, V

GS

=10V,

I

D

=180A, R

G

=3.5W

V

DD

=64V, I

D

=180A,

V

GS

=0 to 10V

2)

Specified by design. Not subject to production test.

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm

2

(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

1)

Current is limited by bondwire; with an R

thJC

= 0.54K/W the chip is able to carry 237A at 25°C.

Rev. 1.0 page 3 2014-06-20

P1-P3 P4-P6 P7-P9

IPB180N08S402ATMA1

Mfr. #:

Buy IPB180N08S402ATMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET N-CHANNEL 75/80V

Lifecycle:

New from this manufacturer.

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IPB180N08S402ATMA1