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IPB180N08S402ATMA1
P1-P3
P4-P6
P7-P9
IPB180N08S4-02
1 Power dissipation
2 Drain current
P
tot
= f(
T
C
);
V
GS
≥ 6 V
I
D
= f(
T
C
);
V
GS
≥ 6 V; SMD
3 Safe operating area
4 Max. transient th
ermal impedance
I
D
= f(
V
DS
);
T
C
= 25 °C;
D
= 0; SMD
Z
thJC
= f(
t
p
)
parameter:
t
p
parameter:
D
=
t
p
/
T
1 µs
10 µs
100 µs
1 ms
1
10
100
1000
0.1
1
10
100
V
DS
[V]
I
D
[A]
singl
e pulse
0.01
0.05
0.1
0.5
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-3
10
-2
10
-1
10
0
t
p
[s]
Z
thJC
[K/W]
0
50
100
150
200
250
300
0
5
0
100
150
200
T
C
[
°
C]
P
tot
[W]
0
40
80
120
160
200
0
5
0
100
150
200
T
C
[
°
C]
I
D
[A]
Rev. 1.0
page 4
2014-06-20
IPB180N08S4-02
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I
D
= f(
V
DS
);
T
j
= 25 °C; SMD
R
DS(on)
= f(
I
D
);
T
j
= 25 °C; SMD
parameter:
V
GS
parameter:
V
GS
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I
D
= f(
V
GS
);
V
DS
= 6V
R
DS(on)
= f(
T
j
);
I
D
= 100 A;
V
GS
= 10 V; SMD
parameter:
T
j
1
1.5
2
2.5
3
3.5
-60
-20
20
60
100
140
180
T
j
[
°
C]
R
DS(on)
[m
W
]
5 V
5.5 V
6 V
7 V
10 V
0
80
160
240
320
400
480
560
640
720
0
1
2
3
4
5
V
DS
[V]
I
D
[A]
5 V
5.5 V
6 V
7 V
10 V
0
1
2
3
4
5
6
0
90
180
I
D
[A]
R
DS(on)
[m
W
]
-55 °C
25 °C
175 °C
0
80
160
240
320
400
480
560
640
720
3
4
5
6
7
V
GS
[V]
I
D
[A]
Rev. 1.0
page 5
2014-06-20
IPB180N08S4-02
9 Typ. gate threshold vo
ltage
10 Typ. capacitances
V
GS(th)
= f(
T
j
);
V
GS
=
V
DS
C
= f(
V
DS
);
V
GS
= 0 V;
f
= 1 MHz
parameter:
I
D
11 Typical forward diode characteristicis
12 A
valanche characteristics
IF = f(V
SD
)
I
A S
= f(
t
AV
)
parameter:
T
j
parameter: T
j(start)
Ciss
Coss
Crss
10
1
10
2
10
3
10
4
0
10
20
30
40
50
6
0
70
80
V
DS
[V]
C
[pF]
25 °C
175 °C
10
0
10
1
10
2
10
3
0
0
.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
[V]
I
F
[A]
220 µA
2200 µA
1
1.5
2
2.5
3
3.5
-60
-20
20
60
100
140
180
T
j
[
°
C]
V
GS(th)
[V]
10
5
25 °C
100 °C
150 °C
1
10
100
1000
1
10
100
1000
t
AV
[µs]
I
AV
[A]
25 °C
175 °C
10
0
10
1
10
2
10
3
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
[V]
I
F
[A]
Rev. 1.0
page 6
2014-06-20
P1-P3
P4-P6
P7-P9
IPB180N08S402ATMA1
Mfr. #:
Buy IPB180N08S402ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL 75/80V
Lifecycle:
New from this manufacturer.
Delivery:
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IPB180N08S402ATMA1