LH52256C-70LL

LH52256C/CH
CMOS 256K (32K × 8) Static RAM
FEATURES
32,768 × 8 bit organization
Access time: 70 ns (MAX.)
Supply current:
Operating: 45 mA (MAX.)
10 mA (MAX.) (t
RC
, t
WC
= 1 µs)
Standby: 40 µA (MAX.)
Data retention current: 1.0 µA (MAX.)
(V
CCDR
= 3 V, T
A
= 25°C)
Wide operating voltage range:
4.5 V ± 5.5 V
Operating temperature:
Commerical temperature 0°C to +70°C
Industrial temperature -4 to +85°C
Fully-static operation
Three-state outputs
Not designed or rated as radiation
hardened
Package:
28-pin, 600-mil DIP
28-pin, 450-mil SOP
28-pin, 300-mil SK-DIP
28-pin, 8 × 3 mm
2
TSOP (Type I)
N-type bulk silicon
DESCRIPTION
The LH52256C is a Static RAM organized as
32,768 × 8 bits which provides low-power standby
mode. It is fabricated using silicon-gate CMOS process
technology.
PIN CONNECTIONS
52256C-1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
A
14
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
A
9
A
11
OE
A
10
I/O
6
I/O
5
GND
I/O
8
I/O
7
CE
A
13
A
8
I/O
1
I/O
2
I/O
3
I/O
4
28-PIN DIP
28-PIN SK-DIP
28-PIN SOP
TOP VIEW
Figure 1. Pin Connections
2
3
4
5
6
9
10
7
8
A
11
11
1
28
27
26
25
22
21
24
23
20
19
A
10
28-PIN TSOP (Type I)
12
13
14
17
16
18
15
OE
A
8
A
9
A
13
WE
A
12
A
14
I/O
3
I/O
2
A
1
I/O
8
CE
I/O
6
I/O
7
GND
I/O
5
I/O
4
I/O
1
A
0
52256C-8
V
CC
A
7
A
6
A
5
A
4
A
3
A
2
NOTE: Reverse bend available on request.
Figure 2. TSOP (Type I) Pin Connections
1
A
4
A
3
52256C-2
MEMORY
ARRAY
(512 x 512)
A
5
ROW
DECORDER
WE
A
6
A
7
27
A
12
V
CC
GND
OE
22
28
14
A
13
CE
20
COLUMN I/O
CIRCUIT
COLUMN
DECODER
OUTPUT
BUFFERS
I/O
1
11
12
13
15
16
17
18
19
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
I/O
8
10 9
8
21
24
23
INPUT
DATA
CONTROL
26
2
3
4
5
6
7
A
0
A
1
A
2
A
10
A
9
A
11
A
14
A
8
25
1
8
8
Figure 3. LH52256C Block Diagram
PIN DESCRIPTION
SIGNAL PIN NAME
A
0
- A
14
Address inputs
CE
Chip enable
WE
Write enable
OE Output enable
SIGNAL PIN NAME
I/O
1
- I/O
8
Data inputs and outputs
V
CC
Power supply
GND
Ground
LH52256C/CH CMOS 256K (32K × 8) Static RAM
2
TRUTH TABLE
CE WE OE MODE I/O
1
- I/O
8
SUPPLY CURRENT NOTE
H X X Standby High impedance Standby (I
SB
)1
L H L Read Data output Active (I
CC
)1
L H H Output disable High impedance Active (I
CC
)1
L L X Write Data input Active (I
CC
)1
NOTE:
1. X = Don’t care, L = Low, H = High
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATING UNIT NOTE
Supply voltage V
CC
0.5 to +7.0 V 1
Input voltage V
IN
0.5 to V
CC
+ 0.5 V 1, 2
Operating temperature T
OPR
0 to +70
°C
Storage temperature T
STG
–65 to +150
°C
NOTES:
1. The maximum applicable voltage on any pin with respect to GND.
2. Undershoot of -3.0 V is allowed width of pulse below 50 ns.
RECOMMENDED DC OPERATING CONDITIONS (T
A
= 0°C to +70°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE
Supply voltage V
CC
4.5 5.0 5.5 V
Input voltage
V
IH
2.2
V
CC
+ 0.5 V
V
IL
–0.5
0.8 V 1
NOTE:
1. Undershoot of -3.0 V is allowed width of pulse below 50 ns.
CMOS 256K (32K × 8) Static RAM LH52256C/CH
3

LH52256C-70LL

Mfr. #:
Manufacturer:
Sharp Microelectronics
Description:
IC SRAM 256K PARALLEL 28DIP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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