Nexperia
BCM53DS
80 V, 1 A PNP/PNP matched double transistors
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
collector-base voltage open emitter - -100 V
V
CEO
collector-emitter voltage open base - -80 V
V
EBO
emitter-base voltage open collector - -5 V
I
C
collector current - -1 A
I
CM
peak collector current single pulse; t
p
≤ 1 ms - -2 A
I
Blim
limiting base current - -0.2 A
I
BM
peak base current single pulse; t
p
≤ 1 ms - -0.3 A
[1] - 270 mWP
tot
total power dissipation T
amb
≤ 25 °C
[2] - 320 mW
Per device
[1] - 400 mWP
tot
total power dissipation T
amb
≤ 25 °C
[2] - 500 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated; mounting pad for collector 1 cm
2
.
T
amb
(°C)
-75 17512525 75-25
aaa-027468
200
400
600
P
tot
(mW)
0
(1)
(2)
(1) = FR4 PCB, single sided copper, 1 cm
2
(2) = FR4 PCB, single sided copper, standard footprint
Fig. 1. Per device: Power derating curves
BCM53DS All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 10 April 2018 3 / 13
