Nexperia
BCM53DS
80 V, 1 A PNP/PNP matched double transistors
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
[1] - - 463 K/WR
th(j-a)
thermal resistance
from junction to
ambient
in free air
[2] - - 391 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
- - 150 K/W
Per device
[1] - - 313 K/WR
th(j-a)
thermal resistance
from junction to
ambient
in free air
[2] - - 250 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm
2
.
aaa-027469
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0
0.01
0.02
0.05
0.20
0.10
0.75
0.33
0.50
FR4 PCB, single sided copper, tin-plated and standard footprint
Fig. 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
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Nexperia B.V. 2018. All rights reserved
Product data sheet 10 April 2018 4 / 13
