Nexperia
BCM53DS
80 V, 1 A PNP/PNP matched double transistors
aaa-027481
100
150
50
200
250
h
FE
0
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
(1)
(3)
(2)
V
CE
= -2 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -55 °C
Fig. 4. DC current gain as a function of collector
current; typical values
aaa-027482
100
50
150
h
FE
200
0
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
(1)
(2)
(3)
T
amb
= 25 °C
(1) V
CE
= -1 V
(2) V
CE
= -2 V
(3) V
CE
= -5 V
Fig. 5. DC current gain as a function of collector
current; typical values
V
CE
(V)
-0 -5-4-2 -3-1
aaa-027483
-0.4
-0.6
-0.2
-0.8
-1.0
I
C
(A)
-0
-6
-4.5
-1.5
-3
-7.5
-9
-10.5
-12
-13.5
I
B
(
m
A
)
=
-
5
T
amb
= 25 °C
Fig. 6. Collector current as a function of collector-
emitter voltage; typical values
aaa-027484
-0.6
-0.3
-0.9
-1.2
V
BE
(V)
-0
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
1
(1)
(3)
(2)
V
CE
= -2 V
T
amb
= -55 °C
T
amb
= 25 °C
T
amb
= 100 °C
Fig. 7. Base-emitter voltage as a function of collector
current; typical values
BCM53DS All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 10 April 2018 7 / 13
Nexperia
BCM53DS
80 V, 1 A PNP/PNP matched double transistors
aaa-027485
-0.4
-0.8
-1.2
V
BEsat
(V)
-0
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
(1)
(2)
(3)
I
C
/I
B
= 10
(1) T
amb
= -55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 8. Base-emitter saturation voltage as a function of
collector current; typical values
aaa-027486
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
-10
-1
-1
V
CEsat
(V)
-10
-2
(3)
(1)
(2)
I
C
/I
B
= 10
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -55 °C
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-027487
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
-10
-1
-1
V
CEsat
(V)
-10
-2
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 50
(2) I
C
/I
B
= 20
(3) I
C
/I
B
= 5
Fig. 10. Collector-emitter saturation voltage as a
function of collector current; typical values
V
CB
(V)
-0 -100-80-40 -60-20
aaa-027488
10
15
5
20
25
C
C
(pF)
0
f = 1 MHz
T
amb
= 25 °C
Fig. 11. Collector capacitance as a function of
collector-base voltage; typical values
BCM53DS All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 10 April 2018 8 / 13
Nexperia
BCM53DS
80 V, 1 A PNP/PNP matched double transistors
aaa-027489
V
EB
(V)
-0 -5-4-2 -3-1
70
C
E
(pF)
50
30
10
0
20
40
60
f = 1 MHz
T
amb
= 25 °C
Fig. 12. Emitter capacitance as a function of emitter-
base voltage; typical values
aaa-027490
I
C
(mA)
-10
-1
-10
3
-10
2
-1 -10
10
2
10
3
f
T
(MHz)
10
V
CE
= -5 V
f = 100 MHz
T
amb
= 25 °C
Fig. 13. Transition frequency as a function of collector
current; typical values
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
12. Package outline
3.0
2.5
1.7
1.3
3.1
2.7
pin 1 index
1.9
0.26
0.10
0.40
0.25
0.95
1.1
0.9
0.6
0.2
1 32
456
18-03-11Dimensions in mm
Fig. 14. Package outline TSOP6 (SOT457)
BCM53DS All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 10 April 2018 9 / 13

BCM53DSF

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT BCM53DS SC-74
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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