DMC3025LSD-13 Datasheet DMC3025LSD-13 | P1-P3

DMC3025LSD

Document number: DS35717 Rev. 7 - 2

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February 2015

DMC3025LSD

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30V COMPLEMENTARY ENHANCEMENT MODE MOSFET

Product Summary

Device

V

(BR)DSS

R

DS(ON) max

Package

I

D MAX

T

A

= +25°C

N-Channel

30V

20mΩ @ V

GS

= 10V

SO-8

8.5A

32mΩ @ V

GS

= 4.5V

7.0A

P-Channel

-30V

45mΩ @ V

GS

= -10V

-5.5A

85mΩ @ V

GS

= -4.5V

-4.1A

Description

This MOSFET is designed to minimize the on-

state resistance

(R

DS(ON)

) and yet maintain superior switching performance, making it

ideal for high-efficiency power management applications.

Applications

• DC Motor Control

• DC-AC Inverters

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See Diagram

• Terminals: Finish  Matte Tin Annealed Over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.008 grams (Approximate)

Ordering Information

(Note 4)

Part Number

Case

Packaging

DMC3025LSD-13 SO-8 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Pin Configuration

S2

D1

D2

G1

D2

D1

G2

S1

Top View

SO-8

Equivalent Circuit

Top View

Logo

Part no.

Year: “11” = 2011

1

4

8 5

C3025LD

YY WW

Xth week: 01 ~ 53

Q2 N-

CHANNEL MOSFET

Q1 P-CHANNEL MOSFET

D2

S2

G2

D1

S1

G1

DMC3025LSD

Document number: DS35717 Rev. 7 - 2

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February 2015

DMC3025LSD

ADVANCED I NF O R M A T I O N

Maximum Ratings N-CHANNEL– Q2

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage

V

DSS

30 V

Gate-Source Voltage

V

GSS

±20 V

Continuous Drain Current (Note 5) V

GS

= 10V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

6.5

5.1

A

t<10s

T

A

= +25°C

T

A

= +70°C

I

D

8.5

6.8

A

Continuous Drain Current (Note 5) V

GS

= 4.5V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

5.3

4.1

A

t<10s

T

A

= +25°C

T

A

= +70°C

I

D

7.0

5.5

A

Maximum Continuous Body Diode Forward Current (Note 5)

I

S

2 A

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

I

DM

60 A

Pulsed Body Diode Current (10µs pulse, duty cycle = 1%)

I

SM

60 A

Avalanche Current (Note 7) L = 0.1mH

I

AS

14 A

Avalanche Energy (Note 7) L = 0.1mH

E

AS

10 mJ

Maximum Ratings P-CHANNEL– Q1

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage

V

DSS

-30 V

Gate-Source Voltage

V

GSS

±20 V

Continuous Drain Current (Note 5) V

GS

= -10V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

-4.2

-3.2

A

t<10s

T

A

= +25°C

T

A

= +70°C

I

D

-5.5

-4.3

A

Continuous Drain Current (Note 5) V

GS

= -4.5V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

-3.5

-2.3

A

t<10s

T

A

= +25°C

T

A

= +70°C

I

D

-4.1

-3.2

A

Maximum Continuous Body Diode Forward Current (Note 5)

I

S

-2 A

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

I

DM

-30 A

Pulsed Body Diode Current (10µs pulse, duty cycle = 1%)

I

SM

-30 A

Avalanche Current (Note 7) L = 0.1mH

I

AS

-14 A

Avalanche Energy (Note 7) L = 0.1mH

E

AS

10 mJ

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 6)

T

A

= +25°C

P

D

1.2

W

T

A

= +70°C

0.77

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

R

θ

JA

104

°C/W

t<10s 62

Total Power Dissipation (Note 5)

T

A

= +25°C

P

D

1.5

W

T

A

= +70°C

0.95

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

R

θ

JA

83

°C/W

t<10s 49

Thermal Resistance, Junction to Case (Note 5)

R

θ

JC

15

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150 °C

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

DMC3025LSD

Document number: DS35717 Rev. 7 - 2

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DMC3025LSD

ADVANCED I NF O R M A T I O N

Electrical Characteristics N-CHANNEL– Q2

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BV

DSS

30 —

— V

V

GS

= 0V, I

D

= 250µA

Zero Gate Voltage Drain Current

I

DSS

—

1 µA

V

DS

= 30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

—

±1 µA

V

GS

= ±20V, V

DS

= 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

V

GS(th)

1.0 — 2.0 V

V

DS

= V

GS

, I

D

= 250µA

Static Drain-Source On-Resistance

R

DS (ON)

—

15 20

mΩ

V

GS

= 10V, I

D

= 7.4A

—

23 32

V

GS

= 4.5V, I

D

= 6A

Forward Transfer Admittance

|Y

fs

|

—

8 — S

V

DS

= 5V, I

D

= 10A

Diode Forward Voltage

V

SD

—

0.70 1.2 V

V

GS

= 0V, I

S

= 1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

C

iss

—

501 —

pF

V

DS

= 15V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

—

72 —

Reverse Transfer Capacitance

C

rss

—

57 —

Gate Resistance

R

g

—

1.84 —

Ω

V

DS

= 0V, V

GS

= 0V, f = 1.0MHz

Total Gate Charge (V

GS

= 4.5V) Q

g

—

4.6 —

nC

V

DS

= 15V, I

D

= 10A

Total Gate Charge (V

GS

= 10V) Q

g

—

9.8 —

Gate-Source Charge

Q

gs

—

1.6 —

Gate-Drain Charge

Q

gd

—

2.0 —

Turn-On Delay Time

t

D(on)

—

3.9 —

ns

V

DD

= 15V, V

GS

= 10V,

R

G

= 6Ω, I

D

= 1A

Turn-On Rise Time

t

r

—

4.2 —

Turn-Off Delay Time

t

D(off)

—

16.6 —

Turn-Off Fall Time

t

f

—

5.8 —

Reverse Recovery Time

t

rr

—

5.5 —

ns

I

F

= 12A, di/dt = 500A/µs

Reverse Recovery Charge

Q

rr

—

2.6 —

nC

DMC3025LSD-13

DMC3025LSD-13

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