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DMC3025LSD-13

P1-P3P4-P6P7-P9P10-P10
DMC3025LSD
Document number: DS35717 Rev. 7 - 2
7 of 10
www.diodes.com
February 2015
© Diodes Incorporated
DMC3025LSD
ADVANCED I NF O R M A T I O N
P-CHANNEL
0
5
10
15
20
0 0.5 1.0 1.5 2.0
2.5
3.0
-V , DRAIN -SOURCE VOLTAGE (V)
Figure 13. Typical Output Characteristics
DS
-
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
V = -3.0V
GS
V = -3.5V
GS
V = -4.0V
GS
V = -4.5V
GS
V = -10V
GS
V = -5.0V
GS
V = -2.5V
GS
0
5
10
15
20
0 1 2 3 4 5
-V , GATE-SOURCE VOLTAGE (V)
GS
Figure 14. Typical Transfer Characteristics
-
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
T = 150 C
A
°
T = 125 C
A
°
T = 85 C
A
°
T = 25 C
A
°
T = -55 C
A
°
V = -5.0V
DS
0
0.02
0.04
0.06
0.08
0.10
0.12
0 4 8 12
16
20
-I , DRAIN SOURCE CURRENT (A)
Figure 15. Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
DS(ON)
Ω
0
0.02
0.04
0.06
0.08
0.10
3 4 5 6 7 8 9 10
-V , GATE SOURCE VOLTAGE (V)
GS
Figure 16. Typical On-Resistance vs.
Drain Current and Gate Voltage
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
DS(ON)
Ω
0
0.02
0.04
0.06
0.08
0.10
0 5 10 15 20
-I , DRAIN SOURCE CURRENT (A)
Figure 17. Typical On-Resistance vs.
Drain Current and Temperature
D
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
DS(ON)
Ω
T = -55 C
A
°
T = 25 C
A
°
T = 85 C
A
°
T = 125 C
A
°
T = 150 C
A
°
V = -4.5V
GS
-50
-25
0 25 50 75
100
125
150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 18. On-Resistance Variation with Temperature
0.5
0.7
0.9
1.1
1.3
1.5
1.7
R
,
D
R
A
I
N
-
S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
DMC3025LSD
Document number: DS35717 Rev. 7 - 2
8 of 10
www.diodes.com
February 2015
© Diodes Incorporated
DMC3025LSD
ADVANCED I NF O R M A T I O N
0
0.02
0.04
0.06
0.08
0.10
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 19. On-Resistance Variation with Temperature
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
DS(on)
Ω
V = -10V
I = A
GS
D
-10
V = 5V
I = A
GS
D
-4.
-5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75
100
125
150
T , AMBIENT TEMPERATURE (°C)
Figure 20. Gate Threshold Variation vs. Ambient Temperature
A
V
,
G
A
T
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
(
V
)
GS(TH)
0
4
8
12
16
20
0.4 0.6
0.8
1.0
1.2
1.4
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 21. Diode Forward Voltage vs. Current
SD
-
I
,
S
O
U
R
C
E
C
U
R
R
E
N
T
(
A
)
S
10
1,000
10,000
C
,
J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
T
100
0 5 10 15 20 25 30
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 22. Typical Junction Capacitance
DS
C
oss
C
rss
f = 1MHz
C
iss
0 2 4
6
8
10
12
Q , TOTAL GATE CHARGE (nC)
Figure 23. Gate-Charge Characteristics
g
0
2
4
6
8
10
-
V
,
G
A
T
E
-
S
O
U
R
C
E
V
O
L
T
A
G
E
(
V
)
GS
R
Limited
DS(on)
DC
P = 10s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ
T = 150°C
T = +25°C
J(max)
A
Single Pulse
P = 1s
W
0.1 1 10
100
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 24. SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
-
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
DMC3025LSD
Document number: DS35717 Rev. 7 - 2
9 of 10
www.diodes.com
February 2015
© Diodes Incorporated
DMC3025LSD
ADVANCED I NF O R M A T I O N
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
1000
t1, PULSE DURATION TIMES (sec)
Figure 25 Transient Thermal Resistance
r(t), TRANSIENT THERMAL RESISTANCE
D = Single Pulse
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.3
D = 0.5
D = 0.7
D = 0.9
R (t) = r(t) * R
thja thja
R = 83C/W
thja
Duty Cycle, D = t1/ t2
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SO-8
SO
-
8
Dim
Min
Max
A
- 1.75
A1
0.10 0.20
A2
1.30 1.50
A3
0.15 0.25
b
0.3 0.5
D
4.85 4.95
E
5.90 6.10
E1
3.85 3.95
e
1.27 Typ
h
- 0.35
L
0.62 0.82
θ
θθ
θ
0° 8°
All Dimensions in mm
Dimensions
Value (in mm)
X
0.60
Y
1.55
C1
5.4
C2
1.27
Gauge Plane
Seating Plane
Detail ‘A’
Detail ‘A’
E
E1
h
L
D
e
b
A2
A1
A
45
°
7
°~
9
°
A3
0.254
X
C1
C2
Y
P1-P3P4-P6P7-P9P10-P10

DMC3025LSD-13

Mfr. #:
Buy DMC3025LSD-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 30V Comp ENH Mode 25 to 30V MosFET
Lifecycle:
New from this manufacturer.
Delivery:
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