DMC3025LSD-13 Datasheet DMC3025LSD-13 | P4-P6

DMC3025LSD

Document number: DS35717 Rev. 7 - 2

4 of 10

www.diodes.com

February 2015

DMC3025LSD

ADVANCED I NF O R M A T I O N

Electrical Characteristics P-CHANNEL – Q1

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BV

DSS

-30 — — V

V

GS

= 0V, I

D

= -250µA

Zero Gate Voltage Drain Current

I

DSS

—

-1 µA

V

DS

= -30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

—

±100 nA

V

GS

= ±20V, V

DS

= 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

V

GS(th)

-1.0 — -2.0 V

V

DS

= V

GS

, I

D

= -250µA

Static Drain-Source On-Resistance

R

DS (ON)

—

38 45

mΩ

V

GS

= -10V, I

D

= -5.2A

—

65 85

V

GS

= -4.5V, I

D

= -4A

Forward Transfer Admittance

|Y

fs

|

—

5 — S

V

DS

= -5V, I

D

= -5.2A

Diode Forward Voltage

V

SD

—

-0.7 -1.2 V

V

GS

= 0V, I

S

= -1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

C

iss

—

590 —

pF

V

DS

= -25V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

—

69 —

pF

Reverse Transfer Capacitance

C

rss

—

53 —

pF

Gate Resistance

R

g

—

11 —

Ω

V

DS

= 0V, V

GS

= 0V, f = 1.0MHz

Total Gate Charge (V

GS

= 4.5V) Q

g

—

5.1 —

nC

V

DS

= -15V, I

D

= -6A

Total Gate Charge (V

GS

= 10V) Q

g

—

10.5 —

nC

Gate-Source Charge

Q

gs

—

1.8 —

nC

Gate-Drain Charge

Q

gd

—

1.9 —

nC

Turn-On Delay Time

t

D(on)

—

6.8 —

ns

V

DD

= -15V, V

GS

= -10V,

R

G

= 6Ω, I

D

= -1A

Turn-On Rise Time

t

r

—

4.9 —

ns

Turn-Off Delay Time

t

D(off)

—

28.4 —

ns

Turn-Off Fall Time

t

f

—

12.4 —

ns

Reverse Recovery Time

t

rr

—

14 —

ns

I

F

= 12A, di/dt = 500A/µs

Reverse Recovery Charge

Q

rr

—

11 —

nC

Notes: 7. I

AS

and E

AS

rating are based on low frequency and duty cycles to keep T

J

= +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

DMC3025LSD

Document number: DS35717 Rev. 7 - 2

5 of 10

www.diodes.com

February 2015

DMC3025LSD

ADVANCED I NF O R M A T I O N

N-CHANNEL

0

5

10

15

20

25

30

0 0.5 1.0 1.5 2.0

2.5

3.0

V , DRAIN-SOURCE VOLTAGE (V)

Figure 1. Typical Output Characteristic

DS

I

,

D

R

A

I

N

C

U

R

E

N

T

(

A

)

D

0

5

10

15

20

25

30

0 1 2 3 4 5

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 2. Typical Transfer Characteristics

I

,

D

R

A

I

N

C

U

R

E

N

T

(

A

)

D

V = 5.0V

DS

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0.005

0.015

0.025

0 5 10 15 20

0.010

0.020

0.030

0

I , DRAIN-SOURCE CURRENT (A)

D

Figure. 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

R

,

D

R

A

I

N

-

S

O

U

R

C

E

O

N

-

R

E

S

I

S

T

A

N

C

E

(

)

DS(ON)

Ω

V = 4.5V

GS

V = 10V

GS

3

4

5

6

7

8

9

10

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 4. Typical On-Resistance vs.

Drain Current and Gate Voltage

0

0.02

0.04

0.06

0.08

0.10

R

,

D

R

A

I

N

-

S

O

U

R

C

E

O

N

-

R

E

S

I

S

T

A

N

C

E

(

)

DS(ON)

Ω

I = 10A

D

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0 5 10 15 20 25 30

0

I , DRAIN CURRENT (A)

D

Figure 5. Typical On-Resistance vs.

Drain Current and Temperature

R

,

D

R

A

I

N

-

S

O

U

R

C

E

O

N

-

R

E

S

I

S

T

A

N

C

E

(

)

DS(ON)

Ω

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = 4.5V

GS

T = -55°C

A

0.6

0.8

1.2

1.4

1.6

1.0

-50

-25

0 25 50 75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Figure 6. On-Resistance Variation with Temperature

J

°

R

,

D

R

A

I

N

-

S

O

U

R

C

E

ON-RESISTANCE (NORMALIZED)

DS(ON)

V = 4.5V

I = 5A

GS

D

V = V

I = 10A

GS

D

10

DMC3025LSD

Document number: DS35717 Rev. 7 - 2

6 of 10

www.diodes.com

February 2015

DMC3025LSD

ADVANCED I NF O R M A T I O N

0.005

0.015

0.025

0.035

0.010

0.020

0.030

0.040

0

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

Figure 7. On-Resistance Variation with Temperature

J

°

R

,

D

R

A

I

N

-

S

O

U

R

C

E

O

N

-

R

E

S

I

S

T

A

N

C

E

(

)

DS(ON)

Ω

V = 4.5V

I = 5A

GS

D

V = V

I = 10A

GS

D

10

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

2.0

1.0

0

-50

-25

0 25 50 75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

J

°

V

,

G

A

T

E

T

H

R

E

S

H

O

L

D

V

O

L

T

A

G

E

(

V

)

GS(th)

I = 1mA

D

I = 250µA

D

0

5

10

15

20

25

30

0

0.2

0.4

0.6

0.8

1.0

1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9. Diode Forward Voltage vs. Current

I

,

S

O

U

R

C

E

C

U

R

E

N

T

(

A

)

S

T = 25°C

A

0

5

10

15

20

25

30

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10. Typical Junction Capacitance

10

100

1,000

10,000

C

,

J

U

N

C

T

I

O

N

C

A

P

A

C

I

T

A

N

C

E

(

p

F

)

T

C

iss

C

oss

C

rss

f = 1MHz

0 2 4

6

8

10

12

V

G

A

T

E

T

H

R

E

S

H

O

L

D

V

O

L

T

A

G

E

(

V

)

GS

Q (nC)

g

, TOTAL GATE CHARGE

Figure 11. Gate Charge

V = 15V

I = A

DS

D

10

0.1 1 10 100

V , DRAIN-SOURCE VOLTAGE (V)

Figure 12. SOA, Safe Operation Area

DS

0.01

0.1

1

10

100

I

,

D

R

A

I

N

C

U

R

E

N

T

(

A

)

D

R

Limited

DS(on)

DC

P = 10s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

P = 10 s

W

µ

T = 150°C

T = 25°C

J(max)

A

Single Pulse

P = 1s

W

DMC3025LSD-13

DMC3025LSD-13

Products related to this Datasheet