9397 750 14031 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 02 — 26 January 2005 2 of 12
Philips Semiconductors
PH4530L
N-channel TrenchMOS™ logic level FET
3. Ordering information
4. Limiting values
Table 2: Ordering information
Type number Package
Name Description Version
PH4530L LFPAK plastic single-ended surface mounted package (LFPAK); 4 leads SOT669
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage (DC) 25 °C ≤ T
j
≤ 150 °C - 30 V
V
GS
gate-source voltage (DC) - ±20 V
I
D
drain current (DC) T
mb
=25°C; V
GS
=10V;Figure 2 and 3 -80A
T
mb
= 100 °C; V
GS
=10V;Figure 2 - 240 A
I
DM
peak drain current T
mb
=25°C; pulsed; t
p
≤ 10 µs; Figure 3 - 50.7 A
P
tot
total power dissipation T
mb
=25°C; Figure 1 - 62.5 W
T
stg
storage temperature −55 +150 °C
T
j
junction temperature −55 +150 °C
Source-drain diode
I
S
source (diode forward) current (DC) T
mb
=25°C - 52 A
I
SM
peak source (diode forward) current T
mb
=25°C; pulsed; t
p
≤ 10 µs - 150 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
unclamped inductive load; I
D
= 36.2 A;
t
p
= 0.24 ms; V
DD
≤ 30 V; V
GS
=10V;
starting T
j
=25°C
- 130 mJ
