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PH4530L,115

P1-P3P4-P6P7-P9P10-P12
9397 750 14031 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 02 — 26 January 2005 4 of 12
Philips Semiconductors
PH4530L
N-channel TrenchMOS™ logic level FET
5. Thermal characteristics
5.1 Transient thermal impedance
Table 4: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance from junction to mounting base Figure 4 --2K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
003aaa526
10
-2
10
-1
1
10
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
Z
th(j-mb)
(K/W)
single pulse
0.2
0.1
0.05
δ =
0.5
0.02
t
p
T
P
t
t
p
T
δ =
9397 750 14031 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 02 — 26 January 2005 5 of 12
Philips Semiconductors
PH4530L
N-channel TrenchMOS™ logic level FET
6. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown voltage I
D
= 250 µA; V
GS
=0V 30--V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
=V
GS
; Figure 9 1 1.5 2 V
I
DSS
drain-source leakage current V
DS
=30V; V
GS
=0V
T
j
=25°C - 0.06 1 µA
T
j
= 150 °C - - 500 µA
I
GSS
gate-source leakage current V
GS
= ±15 V; V
DS
= 0 V - 2 100 nA
R
DSon
drain-source on-state resistance V
GS
= 10 V; I
D
=15A;Figure 7 and 8
T
j
=25°C - 4.8 5.7 mΩ
T
j
= 150 °C - 8.2 9.7 mΩ
V
GS
=5V; I
D
=15A;Figure 7 and 8 - 5.8 7.2 mΩ
Dynamic characteristics
Q
g(tot)
total gate charge I
D
= 25 A; V
DS
=10V; V
GS
=5V;
Figure 13
- 23.5 - nC
Q
gs
gate-source charge - 5.8 - nC
Q
gd
gate-drain (Miller) charge - 6.5 - nC
C
iss
input capacitance V
GS
=0V; V
DS
= 10 V; f = 1 MHz;
Figure 11
-1972-pF
C
oss
output capacitance - 769 - pF
C
rss
reverse transfer capacitance - 304 - pF
t
d(on)
turn-on delay time V
DS
=10V; I
D
= 25 A;
V
GS
=5V;R
G
= 4.7 Ω
-22-ns
t
r
rise time -40-ns
t
d(off)
turn-off delay time - 48 - ns
t
f
fall time -18-ns
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 15 A; V
GS
=0V;Figure 12 - 0.85 1.2 V
t
rr
reverse recovery time I
S
= 20 A; dI
S
/dt = −100 A/µs; V
GS
=0V - 38 - ns
9397 750 14031 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 02 — 26 January 2005 6 of 12
Philips Semiconductors
PH4530L
N-channel TrenchMOS™ logic level FET
T
j
=25°CT
j
=25°C and 150 °C; V
DS
> I
D
xR
DSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T
j
=25°C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
003aaa527
0
10
20
30
40
0 0.5 1 1.5 2
V
DS
(V)
I
D
(A)
2.4
2.2
2.5
2.6
2.7
2.8
3
5
10
V
GS
(V) = 2.9
003aaa528
0
10
20
30
40
01234
V
GS
(V)
I
D
(A)
T
j
= 150
°
C
25
°
C
003aaa529
0
5
10
15
20
0 10203040
I
D
(A)
R
DSon
(m
Ω
)
10
5
2.9
3
2.6
2.7 2.8
V
GS
(V) = 3.5
03al00
0
0.6
1.2
1.8
-60 0
60
120 180
a
T
j
(°C)
a
R
DSon
R
DSon 25 C
°
()
-----------------------------
=
P1-P3P4-P6P7-P9P10-P12

PH4530L,115

Mfr. #:
Buy PH4530L,115
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 30V 80A LFPAK
Lifecycle:
New from this manufacturer.
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