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PH4530L,115
P1-P3
P4-P6
P7-P9
P10-P12
9397 750 14031
© Koninklijk
e Philips Electronics N.V
. 2005. All rights reser
v
ed.
Product data sheet
Rev
. 02 — 26 January 2005
7 of 12
Philips Semiconductors
PH4530L
N-channel T
renchMOS™ logic le
vel FET
I
D
= 1 mA; V
DS
=V
GS
T
j
=2
5
°
C; V
DS
=5V
Fig 9.
Gate-source threshold volta
g
e as a function of
junction temperature.
Fig 10.
Sub-threshold drain current as a function of
gate-source v
oltage
.
V
GS
= 0 V
; f = 1 MHz
Fig 11.
Input, output and rever
se transfer capacitances as a function of drain-sour
ce volta
g
e; typical v
alues.
03aa33
0
0.
5
1
1.
5
2
2.
5
-
60
0
60
120
180
T
j
(
°
C)
V
GS(t
h)
(V)
max
ty
p
min
03aa36
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0123
V
GS
(V)
I
D
(A)
max
ty
p
min
003aaa530
10
2
10
3
10
4
10
-1
1
10
10
2
V
DS
(V)
C
(p
F)
C
iss
C
os
s
C
rs
s
9397 750 14031
© Koninklijk
e Philips Electronics N.V
. 2005. All rights reser
v
ed.
Product data sheet
Rev
. 02 — 26 January 2005
8 of 12
Philips Semiconductors
PH4530L
N-channel T
renchMOS™ logic le
vel FET
T
j
=2
5
°
C and 150
°
C; V
GS
=0V
I
D
= 25 A; V
DD
=1
0V
Fig 12.
Source (diode f
orward) current as a function of
source-drain (diode f
orward) v
oltage; typical
values.
Fig 13.
Gate-source v
oltage as a function of gate
charge; typical v
alues.
003aaa531
0
10
20
30
40
0.
2
0.
4
0.6
0.
8
1
V
SD
(V)
I
S
(A)
T
j
= 25
°
C
150
°
C
003aaa532
0
2
4
6
8
10
0
1
02
0
3
04
05
0
Q
G
(n
C)
V
GS
(V)
9397 750 14031
© Koninklijk
e Philips Electronics N.V
. 2005. All rights reser
v
ed.
Product data sheet
Rev
. 02 — 26 January 2005
9 of 12
Philips Semiconductors
PH4530L
N-channel T
renchMOS™ logic le
vel FET
7.
P
acka
g
e outline
Fig 14.
SO
T669 (LFP
AK) package outline.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
SOT669
MO-235
03-09-15
04-10-13
0
2.5
5 mm
scale
e
E
1
b
c
2
A
2
A
2
bc
A
e
UNIT
DIMENSIONS (mm are the original dimensions)
mm
1.10
0.95
A
3
A
1
0.15
0.00
1.20
1.01
0.50
0.35
b
2
4.41
3.62
b
3
2.2
2.0
b
4
0.9
0.7
0.25
0.19
c
2
0.30
0.24
4.10
3.80
6.2
5.8
H
1.3
0.8
L
2
0.85
0.40
L
1.3
0.8
L
1
8
°
0
°
wy
D
(1)
5.0
4.8
E
(1)
3.3
3.1
E
1
(1)
D
1
(1)
max
0.25
4.20
1.27
0.25
0.1
1
23
4
mounting
base
D
1
c
Plastic single-ended surface mounted package (LFPAK); 4 leads
SOT669
E
b
2
b
3
b
4
H
D
L
2
L
1
A
A
w
M
C
C
X
1/2
e
yC
θ
θ
(A )
3
L
A
A
1
detail X
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
P1-P3
P4-P6
P7-P9
P10-P12
PH4530L,115
Mfr. #:
Buy PH4530L,115
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 30V 80A LFPAK
Lifecycle:
New from this manufacturer.
Delivery:
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