TLP291
2014-09-22
3
Absolute Maximum Ratings
(Note)( Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC SYMBOL
NOTE RATING
UNIT
LED
Input forward current I
F
50 mA
Input forward current derating (Ta90°C) I
F
/Ta -1.5 mA /°C
Input forward current (pulsed ) I
FP
(Note 2) 1 A
Input reverse voltage V
R
5 V
Input power dissipation P
D
100 mW
Input power dissipation derating (Ta 90°C) P
D
/Ta -3.0 mW/°C
Junction temperature T
j
125 °C
DETECTOR
Collector-emitter voltage V
CEO
80 V
Emitter-collector voltage V
ECO
7 V
Collector current I
C
50 mA
Collector power dissipation P
C
150 mW
Collector power dissipation derating(Ta25°C)
P
C
/Ta -1.5 mW /°C
Junction temperature T
j
125 °C
Operating temperature range T
opr
-55 to 110 °C
Storage temperature range T
stg
-55 to 125 °C
Lead soldering temperature T
sol
260 (10s) °C
Total package power dissipation P
T
200 mW
Total package power dissipation derating(Ta25°C)
P
T
/Ta -2.0 mW /°C
Isolation voltage BV
S
(Note3) 3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note2: Pulse width ≤ 100μs, frequency 100Hz
Note3: AC, 1 minute, R.H.60%, Device considered a two terminal device: LED side pins shorted together and
DETECTOR side pins shorted together.
Electrical Characteristics
(Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT
LED
Input forward voltage V
F
I
F
= 10 mA 1.1 1.25 1.4 V
Input reverse current I
R
V
R
= 5 V
-
- 5 μA
Input capacitance C
T
V = 0 V, f = 1 MHz
-
30 - pF
DETECTOR
Collector-emitter breakdown voltage V
(BR) CEO
I
C
= 0.5 mA 80
- -
V
Emitter-collector breakdown voltage V
(BR) ECO
I
E
= 0.1 mA 7
- -
V
Dark current I
CEO
V
CE
= 48 V
-
0.01 0.08 μA
V
CE
= 48 V, Ta = 85°C
-
2 50 μA
Collector-emitter capacitance C
CE
V = 0 V, f = 1 MHz
-
10 - pF
