Integrated Silicon Solution, Inc. — www.issi.com 15
Rev. C
05/29/2013
IS62WV12816DALL/DBLL, IS65WV12816DALL/DBLL
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter Test Condition Min. Max. Unit
Vdr Vdd for Data Retention See Data Retention Waveform 1.5 3.6 V
Idr Data Retention Current Vdd = Vdr(min), Com. — 4 µA
(1) 0V < CS2 < 0.2V, or Ind. — 6 µA
(2) CS1 ≥ Vdd – 0.2V, CS2 > Vdd - 0.2V or Auto. — 20 µA
(3) LB and UB > Vdd -0.2V, CS1 < 0.2V, CS2 > Vdd - 0.2V typ.
(2)
2 µA
tSdr Data Retention Setup Time See Data Retention Waveform 0 — ns
trdr Recovery Time See Data Retention Waveform trc — ns
Note:
1. Typical values are measured at V
dd = Vdr(min), TA = 25
o
C and not 100% tested.
DATA RETENTION WAVEFORM (CS2 Controlled)
CS2 ≤ 0.2V
tSDR tRDR
V
DR
CS2
GND
Data Retention Mode
VDD
