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STD150NH02L-1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
December 2006 Rev 9 1/16
16
STD150NH02L-1
STD150NH02L
N-channel 24V - 0.003Ω - 150A - ClipPAK™ - IPAK
STripFET™ IlI Power MOSFET
General features
■ R
DS(on)
* Qg industry’s benchmark
■ Conduction losses reduced
■ Switching losses reduced
■ Low threshold device
Description
The STD150NH02L utilizes the latest advanced
design rules of ST’s proprietary STripFET™
technology. This novel 0.6µ process utilizes also
unique metallization techniques that couple to a
"bondless" assembly technique result in
outstanding performance with standard DPAK
outline. It is therefore ideal in high performance
DC-DC converter applications where efficiency it
to be achieved at very high out currents.
Applications
■ Switching application
Internal schematic diagram
Type
V
DSSS
R
DS(on)
I
D
STD150NH02L
STD150NH02L-1
24V
24V
<0.0035Ω
<0.0035Ω
150A
150A
1
3
ClipPAK
TM
3
2
1
IPAK
www.st.com
Order codes
Part number Marking Package Packaging
STD150NH02LT4 D150NH02L ClipPAK™ Tape & reel
STD150NH02L-1 D150NH02L IPAK Tube
Contents STD150NH02L
2/16
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STD150NH02L Electrical ratings
3/16
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
spike
(1)
1. Garanted when external Rg = 4.7 Ω and t
f
< t
fmax
.
Drain-source voltage rating 30 V
V
DS
Drain-source voltage (V
GS
= 0) 24 V
V
DGR
Drain-gate voltage (R
GS
= 20KΩ)24V
V
GS
Drain-source voltage ± 20 V
I
D
Drain current (continuous) at T
C
= 25°C 150 A
I
D
Drain current (continuous) at T
C
=100°C 107 A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 600 A
P
TOT
Total dissipation at T
C
= 25°C 125 W
Derating factor 0.83 W/°C
E
AS
(3)
3. Starting T
J
= 25
o
C, I
D
= 75A, V
DD
= 10V
Single pulse avalanche energy 500 mJ
T
stg
Storage temperature
-55 to 175 °C
T
J
Max. operating junction temperature
Table 2. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case Max 1.2 °C/W
R
thJA
Thermal resistance junction-ambient Max 100 °C/W
T
l
Maximum lead temperature for soldering
purpose
275 °C
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

STD150NH02L-1

Mfr. #:
Buy STD150NH02L-1
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch, 24V-0.003ohms 150A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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