STD150NH02L Buck converter - power losses estimation
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Appendix A Buck converter - power losses estimation
The power losses associated with the FETs in a synchronous buck converter can be
estimated using the equations shown in the table below. The formulas give a good
approximation, for the sake of performance comparison, of how different pairs of devices
affect the converter efficiency. However a very important parameter, the working
temperature, is not considered. The real device behavior is really dependent on how the
heat generated inside the devices is removed to allow for a safer working junction
temperature.
The low side (SW2) device requires:
Very low R
DS(on)
to reduce conduction losses
Small Qgls to reduce the gate charge losses
Small Coss to reduce losses due to output capacitance
Small Qrr to reduce losses on SW1 during its turn-on
The Cgd/Cgs ratio lower than Vth/Vgg ratio especially with low drain to source
voltage to avoid the cross conduction phenomenon;
The high side (SW1) device requires:
Small Rg and Ls to allow higher gate current peak and to limit the voltage feedback on
the gate
Small Qg to have a faster commutation and to reduce gate charge losses
Low R
DS(on)
to reduce the conduction losses.
Figure 18. Buck converter: power losses estimation
Buck converter - power losses estimation STD150NH02L
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Table 7. Power losses calculation
High side switching (SW1) Low side switch (SW2)
Pconduction
Pswitching Zero Voltage Switching
Pdiode
Recovery
(1)
1. Dissipated by SW1 during turn-on
Not applicable
Conductio
n
Not applicable
Pgate(Q
G
)
P
Qoss
Table 8. Paramiters meaning
Parameter Meaning
d Duty-cycle
Q
gsth
Post threshold gate charge
Q
gls
Third quadrant gate charge
Pconduction On state losses
Pswitching On-off transition losses
Pdiode Conduction and reverse recovery diode losses
Pgate Gate drive losses
P
Qoss
Output capacitance losses
δ
*I *R
2
LDS(on)SW1
)1(*I *R
2
LDS(on)SW2
δ
g
L
I
I
*f*)Q(Q*
V
gd(SW1)gsth(SW1)in
+
f*Q*V
rr(SW2)in
f*t*I*V
deadtimeLf(SW2)
f*V*Q
ggg(SW1)
f*V*Q
gggls(SW2)
2
f*Q*V
oss(SW1)in
2
f*Q*V
oss(SW2)in
STD150NH02L Revision history
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6 Revision history
Table 9. Revision history
Date Revision Changes
09-Sep-2004 6 Preliminary data
21-Jun-2005 7 Complete version with curves
28-Jul-2006 8 The document has been reformatted
20-Dec-2006 9 Typo mistake on Table 3.

STD150NH02L-1

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch, 24V-0.003ohms 150A
Lifecycle:
New from this manufacturer.
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