Electrical characteristics STD150NH02L
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2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3. On
(1)
/off states
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 25mA, V
GS
= 0
24 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= 20V
V
DS
= 20V, T
C
= 125°C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20V
±100 nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250µA
11.8 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 75A
V
GS
= 5V, I
D
= 37.5A
0.003
0.004
0.0035
0.0065
Ω
Ω
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance V
DS
= 10 V
,
I
D
= 75A 60 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 15V, f = 1 MHz,
V
GS
= 0
4450
1126
141
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 16V, I
D
= 150A
V
GS
= 10V
69
13
9
93 nC
nC
nC
Q
oss
(2)
2. Q
oss =
C
oss
*∆ V
in ,
C
oss =
C
gd +
C
ds .
See Appendix A
Output charge V
DS
= 16V, V
GS
= 0V 27 nC
Q
gls
(3)
3. Gate charge for synchronous operation
Third-quadrant gate charge V
DS
< 0V, V
GS
= 10V 64 nC
R
G
Gate input resistance
f = 1MHz gate DC Bias = 0
Test signal level = 20mV
Open drain
1.6 Ω
