NXP Semiconductors
BGU8009
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS and LTE B32
BGU8009 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2017. All rights reserved.
Product data sheet Rev. 7 — 20 July 2017
14 / 23
aaa-006486
1 1.5 2 2.5 3 3.5
-20
-16
-12
-8
-4
0
V
CC
(V)
P
i(1dB)
P
i(1dB)
(dBm)(dBm)
(3)(3)
(2)(2)
(1)(1)
f = 1850 MHz.
(1) T
amb
= -40°C
(2) T
amb
= +25°C
(3) T
amb
= +85°C
Figure 28. Input power at 1 dB gain compression as a
function of supply voltage; typical values
aaa-006487
1 1.5 2 2.5 3 3.5
-20
-16
-12
-8
-4
0
V
CC
(V)
P
i(1dB)
P
i(1dB)
(dBm)(dBm)
(3)(3)
(2)(2)
(1)(1)
f = 1575 MHz.
(1) T
amb
= -40°C
(2) T
amb
= +25°C
(3) T
amb
= +85°C
Figure 29. Input power at 1 dB gain compression as a
function of supply voltage; typical values
aaa-006488
-50 -40 -30 -20 -10
-110 -110
-90 -90
-70 -70
-50 -50
-30 -30
-10 -10
10 10
P
i
(dBm)
P
L
P
L
(dBm)(dBm)
IMD3IMD3
(dBm)(dBm)
(1)(1)
(2)(2)
(3)(3)
(4)(4)
P
L
P
L
IMD3IMD3
T
amb
= 25°C; f = 1575 MHz; f
1
= 1713 MHz; f
2
= 1851 MHz;
P
i
per carrier.
(1) V
CC
= 1.5 V
(2) V
CC
= 1.8 V
(3) V
CC
= 2.85 V
(4) V
CC
= 3.1 V
Figure 30. Output power and third order intermodulation
distortion as function of input power; typical values
aaa-006489
-50 -40 -30 -20 -10
-110 -110
-90 -90
-70 -70
-50 -50
-30 -30
-10 -10
10 10
P
i
(dBm)
P
L
P
L
(dBm)(dBm)
IMD3IMD3
(dBm)(dBm)
(1)(1)
(2)(2)
(3)(3)
(1)(1)
(2)(2)
(3)(3)
P
L
P
L
IMD3IMD3
V
CC
= 2.85 V; f = 1575 MHz; f
1
= 1713 MHz; f
2
= 1851 MHz;
P
i
per carrier.
(1) T
amb
= - 40°C
(2) T
amb
= +25°C
(3) T
amb
= +85°C
Figure 31. Output power and third order intermodulation
distortion as function of input power; typical values
