NXP Semiconductors
BGU8009
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS and LTE B32
BGU8009 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2017. All rights reserved.
Product data sheet Rev. 7 — 20 July 2017
16 / 23
14 Characteristics LTE B32
Table 11. Characteristics
1474 MHz; V
CC
= 1.8 V; P
i
= -30 dBm; T
amb
= 25 °C; input matched 50 Ω using application diagram from Table 13 and
component values as in Figure 34. Unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Gain Mode
I
CC
supply current V
I(ENABLE)
≥ 0.8 V - 4.4 mA
G
p
power gain - 20 - dB
RL
in
input return loss - 17.5 - dB
RL
out
output return loss - 23.5 - dB
ISL isolation - 36 - dB
NF noise figure
[1]
[2]
- 0.65 - dBm
P
i(1dB)
input power at 1 dB gain compression
[2]
- -11 - dBm
IP3
i
input third-order intercept point Δf = 1 MHz, P
i
= -30 dBm
[2]
[3]
- -7 - dBm
t
on
turn-on time Time from V
I(CTRL)
ON to 90 % of
the gain
- - 2 μs
t
off
turn-off time Time from V
I(CTRL)
OFF to 10 % of
the gain
- - 1 μs
K Rollett stability factor 1 - - -
[1] PCB losses are subtracted.
[2] Guaranteed by device design; not tested in production.
[3] f
1
= 1474 MHz, f
2
= 1475 MHz
Table 12. Characteristics
1474 MHz; V
CC
=2.8 V; P
i
= -30 dBm; T
amb
= 25 °C; input matched 50 Ω using application diagram from Table 13 and
component values as in Figure 34. Unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Gain Mode
I
CC
supply current V
I(ENABLE)
≥ 0.8 V - 4.6 mA
G
p
power gain - 20 - dB
RL
in
input return loss - 17.5 - dB
RL
out
output return loss - 23.5 - dB
ISL isolation - 36 - dB
NF noise figure
[1]
[2]
- 0.65 - dB
P
i(1dB)
input power at 1 dB gain compression
[2]
- -8.5 - dBm
IP3
i
input third-order intercept point Δf = 1 MHz, P
i
= - 30 dBm
[2]
[3]
-6 dBm
