NXP Semiconductors
BGU8009
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS and LTE B32
BGU8009 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2017. All rights reserved.
Product data sheet Rev. 7 — 20 July 2017
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9 Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Absolute Maximum Ratings are given as Limiting
Values of stress conditions during operation, that must not be exceeded under the worst probable conditions.
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage
[1]
-0.5 +5.0 V
V
I(ENABLE)
input voltage on pin
ENABLE
V
I(ENABLE)
< V
CC
+ 0.6 V
[1]
[2]
-0.5 +5.0 V
V
I(RF_IN)
input voltage on pin
RF_IN
DC, V
I(RF_IN)
< V
CC
+ 0.6 V
[1]
[2]
[3]
-0.5 +5.0 V
V
I(RF_OUT)
input voltage on pin
RF_OUT
DC, V
I(RF_OUT)
< V
CC
+ 0.6 V
[1]
[2]
[3]
-0.5 +5.0 V
1575 MHz
[1]
- 10 dBmP
i
input power
1474 MHz
[1]
- 10 dBm
P
tot
total power dissipation T
sp
≤ 130 °C - 55 mW
T
stg
storage temperature -65 +150 °C
T
j
junction temperature - 150 °C
Human Body Model (HBM)
according to JEDEC standard
JS-001-2010
- ±2 kVV
ESD
electrostatic discharge
voltage
Charged Device Model (CDM)
according to JEDEC standard
JESD22-C101C
- ±1 kV
[1] Stressed with pulses of 200 ms in duration, with application circuit as in Figure 34.
[2] Warning: due to internal ESD diode protection, the applied DC voltage shall not exceed V
CC
+ 0.6 V and shall not exceed 5.0 V to avoid excess current.
[3] The RF input and RF output are AC coupled through internal DC blocking capacitors.
10 Recommended operating conditions
Table 7. Operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 1.5 - 3.1 V
T
amb
ambient temperature -40 +25 +85 °C
OFF state - - 0.3 VV
I(ENABLE)
input voltage on pin ENABLE
ON state 0.8 - - V
11 Thermal characteristics
Table 8. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to solder point 225 K/W
