IKP04N60T
TRENCHSTOP
TM
Series q
IFAG IPC TD VLS
1 Rev. 2.8 17.02.2016
Low Loss DuoPack : IGBT in TRENCHSTOP
TM
and Fieldstop technology
with soft, fast recovery anti-parallel Emitter Controlled HE diode
• Very low V
CE(sat)
1.5V (typ.)
• Maximum Junction Temperature 175°C
• Short circuit withstand time 5µs
• Designed for:
- Frequency Converters
- Drives
• TRENCHSTOP
TM
and Fieldstop technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low V
CE(sat)
• Positive temperature coefficient in V
CE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel Emitter Controlled HE diode
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/
Type V
CE
I
C
V
CE(sat),Tj=25°C
T
j,max
Marking Package
IKP04N60T 600V 4A 1.5V
175°C
K04T60 PG-TO220-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage, T
j
≥ 25°C
V
CE
600 V
DC collector current, limited by T
jmax
T
C
= 25°C
T
C
= 100°C
I
C
9.5
6.5
A
Pulsed collector current, t
p
limited by T
jmax
I
Cpul s
12
Turn off safe operating area, V
CE
= 600V, T
j
= 175°C, t
p
= 1µs
-
12
Diode forward current, limited by Tjmax
T
C
= 25°C
T
C
= 100°C
I
F
9.5
6.5
Diode pulsed current, t
p
limited by T
jmax
I
Fp u l s
12
Gate-emitter voltage
V
GE
±20
V
Short circuit withstand time
2)
V
GE
= 15V, V
CC
≤ 400V, T
j
≤ 150°C
t
SC
5
µs
Power dissipation T
C
= 25°C
P
tot
42
W
Operating junction temperature
T
j
-40...+175
°C
Storage temperature
T
stg
-55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
1)
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
