IKP04N60T
TRENCHSTOP
TM
Series q
IFAG IPC TD VLS
7 Rev. 2.8 17.02.2016
E, SWITCHING ENERGY LOSSES
0.0m J
0.1m J
0.2m J
0.3m J
E
ts
*
E
off
*) E
on
and E
ts
include losses
due to diode recovery
E
on
*
E, SWITCHING ENERGY LOSSES
25Ω 50Ω 100Ω 150Ω 200Ω 250Ω
0.0 mJ
0.1 mJ
0.2 mJ
0.3 mJ
0.4 mJ
E
ts
*
E
on
*
*) E
on
and E
ts
include losses
due to diode recovery
E
off
I
C
, COLLECTOR CURRENT R
G
, GATE RESISTOR
Typical switching energy losses
as a function of collector current
(inductive load, T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V, R
G
= 47Ω,
Dynamic test circuit in Figure E)
. Typical switching energy losses
as a function of gate resistor
(inductive load, T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V, I
C
= 4A,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
25°C 50°C 75°C 100°C 125°C 150°C
0µJ
25µJ
50µJ
75µJ
100µJ
125µJ
150µJ
175µJ
E
ts
*
E
on
*
*) E
on
and E
ts
include losses
due to diode recovery
E
off
E, SWITCHING ENERGY LOSSES
300V 350V 400V 450V
E
ts
*
E
on
*
*) E
on
and E
ts
include losses
due to diode recovery
E
off
T
J
, JUNCTION TEMPERATURE V
CE
, COLLECTOR-EMITTER VOLTAGE
Typical switching energy losses
as a function of junction
temperature
(inductive load, V
CE
= 400V,
V
GE
= 0/15V, I
C
= 4A, R
G
= 47Ω,
Dynamic test circuit in Figure E)
Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, T
J
= 175°C,
V
GE
= 0/15V, I
C
= 4A, R
G
= 47Ω,
Dynamic test circuit in Figure E)
