NCP4304A, NCP4304B
www.onsemi.com
27
Figure 65. Possible Connection for t
off_min
Prolongation in LLC Application with
Wide Operating Frequency Range
+Vbulk
+
LLC
STAGE
CONTROL
M1
M2
C1
N1
N2
N3
M3
M4
C4
C2
C3
D1
RTN
+Vout
OK1
R
MIN_TOFF
R
MIN_TON
R
MIN_TOFF
R
MIN_TON
CS
COMP
GND
DRV
VCC
MIN_TOFF
MIN_TON
TRIG/DIS CS
COMP
GND
DRV
TR1
L
COMP1
L
COMP2
Trig from Primary
(Option for LLC)
R
DRAIN2
R
DRAIN1
Note: L
COMP1,
2
are optional for MOSFETs with leads.
VCC
MIN_TOFF
MIN_TON
TRIG/DIS
Note that R
DRAIN1
and R
DRAIN2
should be designed in
such a way that the maximum pulse current into the
MIN_TOFF adjust pin is below 10 mA. Voltage on the
MIN_TOFF and MIN_TON pins is clamped by internal
zener protection to 10 V.
Power Dissipation Calculation
It is important to consider the power dissipation in the
MOSFET driver of a SR system. If no external gate resistor
is used and the internal gate resistance of the MOSFET is
very low, nearly all energy losses related to gate charge are
dissipated in the driver. Thus it is necessary to check the SR
driver power losses in the target application to avoid over
temperature and to optimize efficiency.
In SR systems the body diode of the SR MOSFET starts
conducting before turn on because the V
th_cs_on
threshold
level is below 0 V. On the other hand, the SR MOSFET turn
off process always starts before the drain to source voltage
rises up significantly. Therefore, the MOSFET switch
always operates under Zero Voltage Switching (ZVS)
conditions when implemented in a synchronous
rectification system.
The following steps show how to approximately calculate
the power dissipation and DIE temperature of the
NCP4304A/B controller. Note that real results can vary due
to the effects of the PCB layout on the thermal resistance.
Step 1 – MOSFET Gate-to-Source Capacitance:
During ZVS operation the gate to drain capacitance does
not have a Miller effect like in hard switching systems
because the drain to source voltage is close to zero and its
change is negligible.